AOT5N100 N-Channel MOSFET Datasheet

AOT5N100 Datasheet, PDF, Equivalent


Part Number

AOT5N100

Description

4A N-Channel MOSFET

Manufacture

Alpha & Omega Semiconductors

Total Page 6 Pages
Datasheet
Download AOT5N100 Datasheet


AOT5N100
AOT5N100/AOTF5N100
1000V,4A N-Channel MOSFET
General Description
Product Summary
The AOT5N100 & AOTF5N100 are fabricated using an
advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in
popular AC-DC applications.By providing low RDS(on), Ciss
and Crss along with guaranteed avalanche capability this
parts can be adopted quickly into new and existing offline
power supply designs.
For Halogen Free add "L" suffix to part number:
AOT5N100L & AOTF5N100L
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
TO-220
Top View
TO-220F
1100@150
4A
< 4.2
D
AOT5N100
S
D
G
AOTF5N100
S
GD
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT5N100
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current
TC=25°C
TC=100°C
ID
4
2.5
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
IDM
IAR
EAR
EAS
Peak diode recovery dv/dt
dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
PD
195
1.6
AOTF5N100
1000
±30
4*
2.5*
15
2.8
117
235
5
42
0.3
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
-55 to 150
300
Parameter
Symbol
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
RθJA
RθCS
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
AOT5N100
65
0.5
0.64
AOTF5N100
65
--
3
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev1: Aug 2012
www.aosmd.com
Page 1 of 6

AOT5N100
AOT5N100/AOTF5N100
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS
BVDSS
/∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=1000V, VGS=0V
VDS=800V, TJ=125°C
IGSS
VGS(th)
Gate-Body leakage current
Gate Threshold Voltage
VDS=0V, VGS=±30V
VDS=5V, ID=250µA
RDS(ON)
gFS
VSD
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VGS=10V, ID=2.5A
VDS=40V, ID=2.5A
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=25V, f=1MHz
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=800V, ID=5A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=500V, ID=5A,
RG=25
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=5A,dI/dt=100A/µs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=5A,dI/dt=100A/µs,VDS=100V
1000
3.3
1100
1.04
3.9
3.5
5
0.73
1
10
±100
4.5
4.2
1
4
15
V
V/ oC
µA
nΑ
V
S
V
A
A
750 950 1150 pF
40 62 85 pF
3.5 6
9 pF
2 4.3 6.5
15 19 23
4.6
6.5
27
40
50
33
350 450 550
4.2 5.5 6.8
nC
nC
nC
ns
ns
ns
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=2.8A, VDD=150V, RG=25, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev1: Aug 2012
www.aosmd.com
Page 2 of 6


Features AOT5N100/AOTF5N100 1000V,4A N-Channel MO SFET General Description Product Summ ary The AOT5N100 & AOTF5N100 are fabri cated using an advanced high voltage MO SFET process that is designed to delive r high levels of performance and robust ness in popular AC-DC applications.By p roviding low RDS(on), Ciss and Crss alo ng with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply designs. For Halogen Free add "L" suffi x to part number: AOT5N100L & AOTF5N100 L VDS ID (at VGS=10V) RDS(ON) (at VGS= 10V) 100% UIS Tested 100% Rg Tested TO -220 Top View TO-220F 1100@150℃ 4A < 4.2Ω D AOT5N100 S D G AOTF5N100 S GD G Absolute Maximum Ratings TA= 25°C unless otherwise noted Parameter Symbol AOT5N100 Drain-Source Voltag e VDS Gate-Source Voltage VGS Conti nuous Drain Current TC=25°C TC=100°C ID 4 2.5 Pulsed Drain Current C Ava lanche Current C Repetitive avalanche e nergy C Single pulsed avalanche energy G IDM IAR EAR EAS Peak diode .
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