AON6154 N-Channel MOSFET Datasheet

AON6154 Datasheet, PDF, Equivalent


Part Number

AON6154

Description

45V N-Channel MOSFET

Manufacture

Alpha & Omega Semiconductors

Total Page 6 Pages
Datasheet
Download AON6154 Datasheet


AON6154
AON6154
45V N-Channel MOSFET
General Description
• Trench Power MV MOSFET technology
• Low RDS(ON)
• Low Gate Charge
• Optimized for fast-switching applications
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
45V
100A
< 1.5mΩ
< 2.1mΩ
Applications
• Synchronous Rectification in DC/DC and AC/DC Converters
• Industrial and Motor Drive applications
100% UIS Tested
100% Rg Tested
Top View
DFN5x6
Bottom View
PIN1
PIN1
Top View
18
27
36
45
D
G
S
Orderable Part Number
AON6154
Package Type
DFN 5x6
Form
Tape & Reel
Minimum Order Quantity
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Continuous Drain
Current
Avalanche Current C
TA=25°C
TA=70°C
Avalanche energy L=0.3mH
C
VGS
ID
IDM
IDSM
IAS
EAS
VDS Spike
Power Dissipation B
10µs
TC=25°C
TC=100°C
VSPIKE
PD
Power Dissipation A
TA=25°C
TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
45
±20
100
100
400
49
39
45
304
54
125
50
6.2
4.0
-55 to 150
Units
V
V
A
A
A
mJ
V
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
15
40
0.8
Max
20
50
1.0
Units
°C/W
°C/W
°C/W
Rev.1.0: November 2015
www.aosmd.com
Page 1 of 6

AON6154
AON6154
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=45V, VGS=0V
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS, ID=250µA
VGS=10V, ID=20A
VGS=4.5V, ID=20A
Forward Transconductance
VDS=5V, ID=20A
Diode Forward Voltage
IS=1A, VGS=0V
Maximum Body-Diode Continuous Current G
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=22.5V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=22.5V, ID=20A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=22.5V,
RL=1.125, RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=20A, di/dt=400A/µs
Body Diode Reverse Recovery Charge IF=20A, di/dt=400A/µs
Min
45
1.4
0.5
Typ
1.85
1.2
1.85
1.6
100
0.65
6575
870
82
1.1
86
38
19
6
17
5.5
56
5
22
60
Max Units
1
5
±100
2.4
1.5
2.3
2.1
1
100
V
µA
nA
V
mΩ
mΩ
S
V
A
pF
pF
pF
1.7 Ω
120 nC
54 nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: November 2015
www.aosmd.com
Page 2 of 6


Features AON6154 45V N-Channel MOSFET General De scription • Trench Power MV MOSFET te chnology • Low RDS(ON) • Low Gate C harge • Optimized for fast-switching applications Product Summary VDS ID (a t VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 45V 100A < 1.5mΩ < 2. 1mΩ Applications • Synchronous Rec tification in DC/DC and AC/DC Converter s • Industrial and Motor Drive applic ations 100% UIS Tested 100% Rg Tested Top View DFN5x6 Bottom View PIN1 PI N1 Top View 18 27 36 45 D G S Ordera ble Part Number AON6154 Package Type D FN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Rating s TA=25°C unless otherwise noted Para meter Symbol Drain-Source Voltage VD S Gate-Source Voltage Continuous Drai n TC=25°C Current G TC=100°C Puls ed Drain Current C Continuous Drain Cu rrent Avalanche Current C TA=25°C TA= 70°C Avalanche energy L=0.3mH C VGS ID IDM IDSM IAS EAS VDS Spike Power D issipation B 10µs TC=25°C TC=100°C VSPIKE PD Power Dissipation A TA=25°C TA=70°C.
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