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SCTH35N65G2V-7

STMicroelectronics
Part Number SCTH35N65G2V-7
Manufacturer STMicroelectronics
Description Silicon carbide Power MOSFET
Published Apr 4, 2020
Detailed Description SCTH35N65G2V-7 Datasheet Silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package TAB 7...
Datasheet PDF File SCTH35N65G2V-7 PDF File

SCTH35N65G2V-7
SCTH35N65G2V-7

Overview
SCTH35N65G2V-7 Datasheet Silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ.
, TJ = 25 °C) in an H2PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Features Order code VDS SCTH35N65G2V-7 650 V • Very fast and robust intrinsic body diode • Low capacitance Applications • Switching mode power supply • EV chargers • DC-DC converters RDS(on) typ.
55 mΩ ID 45 A Gate (1) Driver source (2) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTAB Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.
The device features remarkably low on-resistance per unit area and very good switching performance.
The variation...


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