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RBN50H65T1FPQ-A0

Renesas
Part Number RBN50H65T1FPQ-A0
Manufacturer Renesas
Description IGBT
Published Apr 13, 2020
Detailed Description Datasheet RBN50H65T1FPQ-A0 650V - 50A - IGBT Power Switching R07DS1381EJ0120 Rev.1.20 Aug.03.2020 Features  Trench ...
Datasheet PDF File RBN50H65T1FPQ-A0 PDF File

RBN50H65T1FPQ-A0
RBN50H65T1FPQ-A0

Overview
Datasheet RBN50H65T1FPQ-A0 650V - 50A - IGBT Power Switching R07DS1381EJ0120 Rev.
1.
20 Aug.
03.
2020 Features  Trench gate and thin wafer technology (G8H series)  High speed switching  Built in fast recovery diode in one package  Non-specification for short circuit  Low collector to emitter saturation voltage  Applications: UPS, Welding, photovoltaic VCE(sat) = 1.
5 V typ.
(at IC = 50 A, VGE = 15 V, Ta = 25°C) inverters, Power converter system  Quality grade: Standard Key Performance Type RBN50H65T1FPQ-A0 VCES 650 V IC 50 A VCE(sat), TC=25°C 1.
5 V IF 50 A Tj 175 C Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C 4 123 1.
Gate G 2.
Collector 3.
Emitter 4.
Collector E R07DS1381EJ0120 Rev.
1.
20 Aug.
03.
2020 Page 1 of 11 RBN50H65T1FPQ-A0 Absolute Maximum Ratings (Tc = 25C) Item Symbol Ratings Unit Collector to emitter voltage VCES 650 V Gate to emitter voltage VGES 30 V Collector current Tc = 25 C IC 100 A Tc = 100 C ...


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