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RQ3E180BN

ROHM
Part Number RQ3E180BN
Manufacturer ROHM
Description Power MOSFET
Published Apr 28, 2020
Detailed Description RQ3E180BN 　　Nch 30V 39A Middle Power MOSFET VDSS RDS(on)(Max.) ID PD 30V 3.9mΩ ±39A 20W lFeatures 1) Low on - resista...
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RQ3E180BN
RQ3E180BN

Overview
RQ3E180BN 　　Nch 30V 39A Middle Power MOSFET VDSS RDS(on)(Max.
) ID PD 30V 3.
9mΩ ±39A 20W lFeatures 1) Low on - resistance.
2) High Power Package (HSMT8).
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.
lOutline HSMT8 　 　　　　　　 lInner circuit 　　 Datasheet 　 lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Type Tape width (mm) Quantity (pcs) 12 3000 Taping code TB Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) E180BN Parameter Symbol Value Unit Drain - Source voltage VDSS 30 V Continuous drain current Tc = 25°C Ta = 25°C ID*1 ID ±39 A ±18 A Pulsed drain current IDP*2 ±72 A Gate - Source voltage VGSS ±20 V Avalanche current, single pulse IAS*3 18 A Avalanche energy, single pulse EAS*3 23.
3 mJ Power dissipation PD*1 20 W PD*4 2.
0 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　...


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