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RGT8TM65D

Field Stop Trench IGBT

Description

RGT8TM65D 650V 4A Field Stop Trench IGBT Datasheet VCES IC (100℃) VCE(sat) (Typ.) PD 650V 3A 1.65V@IC=4A 16W Features 1) Low Collector - Emitter Saturation Voltage 2) Low Switching Loss 3) Short Circuit Withstand Time 5μs 4) Built in Very Fast & Soft Recovery FRD (RFN - Series) Outline TO-220NFM Inner Circuit (2) (1)(2)(3) *1 (1) (3) (1) Gate...

ROHM

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RGT8TM65D Field Stop Trench IGBT - ROHM

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