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VS-GT300YH120N Datasheet, Equivalent, Trench IGBT.

DIAP Trench IGBT

DIAP Trench IGBT

 

 

 

Part VS-GT300YH120N
Description DIAP Trench IGBT
Feature www.
vishay.
com VS-GT300YH120N Vishay Se miconductors DIAP Trench IGBT Power Mo dule - 1200 V, 300 A Current Fed Invert er Topology PRIMARY CHARACTERISTICS I GBT VCES 1200 V VCE(on) (typical) at 300 A, 25 °C 1.
93 V ID(DC) at TC = 80 °C 300 A HEXFRED® SERIES DIODE VR 1200 V VF (typical) at 300 A, 25 ° C 1.
99 V IF(DC) at 80 °C 300 A IGB T AND HEXFRED® SERIES DIODE VCE(on) + VF typical at 300 A 3.
92 V HEXFRED® ANTIPARALLEL DIODE VF (typical) at 10 A, 25 °C IF(DC) at 88 °C Package 1.
6 V 40 A Dual INT-A-PAK FEATURES
• 1 200 V IGBT trench and field stop techno logy with positive temper .
Manufacture Vishay
Datasheet
Download VS-GT300YH120N Datasheet
Part VS-GT300YH120N
Description DIAP Trench IGBT
Feature www.
vishay.
com VS-GT300YH120N Vishay Se miconductors DIAP Trench IGBT Power Mo dule - 1200 V, 300 A Current Fed Invert er Topology PRIMARY CHARACTERISTICS I GBT VCES 1200 V VCE(on) (typical) at 300 A, 25 °C 1.
93 V ID(DC) at TC = 80 °C 300 A HEXFRED® SERIES DIODE VR 1200 V VF (typical) at 300 A, 25 ° C 1.
99 V IF(DC) at 80 °C 300 A IGB T AND HEXFRED® SERIES DIODE VCE(on) + VF typical at 300 A 3.
92 V HEXFRED® ANTIPARALLEL DIODE VF (typical) at 10 A, 25 °C IF(DC) at 88 °C Package 1.
6 V 40 A Dual INT-A-PAK FEATURES
• 1 200 V IGBT trench and field stop techno logy with positive temper .
Manufacture Vishay
Datasheet
Download VS-GT300YH120N Datasheet

VS-GT300YH120N

VS-GT300YH120N
VS-GT300YH120N

VS-GT300YH120N

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