www.vishay.com
VS-GT300YH120N
Vishay Semiconductors
DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter Topology
PRIMARY CHARACTERISTICS
IGBT
VCES
1200 V
VCE(on) (typical) at 300 A, 25 °C
1.93 V
ID(DC) at TC = 80 °C
300 A
HEXFRED® SERIES DIODE
VR 1200 V
VF (typical) at 300 A, 25 °C
1.99 V
IF(DC) at 80 °C
300 A
IGBT AND HEXFRED...
