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VS-GT300YH120N Datasheet, Equivalent, Trench IGBT.DIAP Trench IGBT DIAP Trench IGBT |
| Part | VS-GT300YH120N |
|---|---|
| Description | DIAP Trench IGBT |
| Feature | www. vishay. com VS-GT300YH120N Vishay Se miconductors DIAP Trench IGBT Power Mo dule - 1200 V, 300 A Current Fed Invert er Topology PRIMARY CHARACTERISTICS I GBT VCES 1200 V VCE(on) (typical) at 300 A, 25 °C 1. 93 V ID(DC) at TC = 80 °C 300 A HEXFRED® SERIES DIODE VR 1200 V VF (typical) at 300 A, 25 ° C 1. 99 V IF(DC) at 80 °C 300 A IGB T AND HEXFRED® SERIES DIODE VCE(on) + VF typical at 300 A 3. 92 V HEXFRED® ANTIPARALLEL DIODE VF (typical) at 10 A, 25 °C IF(DC) at 88 °C Package 1. 6 V 40 A Dual INT-A-PAK FEATURES • 1 200 V IGBT trench and field stop techno logy with positive temper . |
| Manufacture | Vishay |
| Datasheet |
| Part | VS-GT300YH120N |
|---|---|
| Description | DIAP Trench IGBT |
| Feature | www. vishay. com VS-GT300YH120N Vishay Se miconductors DIAP Trench IGBT Power Mo dule - 1200 V, 300 A Current Fed Invert er Topology PRIMARY CHARACTERISTICS I GBT VCES 1200 V VCE(on) (typical) at 300 A, 25 °C 1. 93 V ID(DC) at TC = 80 °C 300 A HEXFRED® SERIES DIODE VR 1200 V VF (typical) at 300 A, 25 ° C 1. 99 V IF(DC) at 80 °C 300 A IGB T AND HEXFRED® SERIES DIODE VCE(on) + VF typical at 300 A 3. 92 V HEXFRED® ANTIPARALLEL DIODE VF (typical) at 10 A, 25 °C IF(DC) at 88 °C Package 1. 6 V 40 A Dual INT-A-PAK FEATURES • 1 200 V IGBT trench and field stop techno logy with positive temper . |
| Manufacture | Vishay |
| Datasheet |
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