DatasheetsPDF.com

MRFE6VP61K25HR5

NXP

RF Power LDMOS Transistors


Description
Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output des...



NXP

MRFE6VP61K25HR5

File Download Download MRFE6VP61K25HR5 Datasheet


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)