N-Channel MOSFET. Si4884BDY Datasheet

Si4884BDY MOSFET. Datasheet pdf. Equivalent

Si4884BDY Datasheet
Recommendation Si4884BDY Datasheet
Part Si4884BDY
Description N-Channel MOSFET
Feature Si4884BDY; N-Channel 30-V (D-S) MOSFET Si4884BDY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.00.
Manufacture Vishay
Datasheet
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Vishay Si4884BDY
N-Channel 30-V (D-S) MOSFET
Si4884BDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0090 at VGS = 10 V
30
0.012 at VGS = 4.5 V
ID (A)a
16.5
13.2
Qg (Typ.)
10.5 nC
FEATURES
Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFETs
• PWM Optimized
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
Top View
Ordering Information: Si4884BDY-T1-E3 (Lead (Pb)-free)
Si4884BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
IS
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
30
± 20
16.5
13.2
12.4b, c
10.0b, c
50
4.0
2.3b, c
15
11
4.45
2.85
2.50b, c
1.6b, c
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t 10 s
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Symbol
RthJA
RthJF
Document Number: 73454
S09-0228-Rev. C, 09-Feb-09
Typical
40
22
Maximum
50
28
Unit
°C/W
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Vishay Si4884BDY
Si4884BDY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 10 A
VGS = 4.5 V, ID = 8 A
Forward Transconductancea
gfs VDS = 15 V, ID = 10 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 15 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 15 V, VGS = 10 V, ID = 12 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-on Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-on Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
VDS = 15 V, VGS = 4.5 V, ID = 12 A
f = 1 MHz
VDD = 15 V, RL = 1.5 Ω
ID 10 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 15 V, RL = 1.5 Ω
ID 10 A, VGEN = 10 V, Rg = 1 Ω
TC = 25 °C
IS = 2.3 A
IF = 9.5 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
Typ.
Max. Unit
30 V
30
mV/°C
6
1 3V
± 100
nA
1
µA
10
30 A
0.007 0.0090
0.0095 0.012
Ω
45 S
1525
295
120
23.5
10.5
4.3
3
1.4
18
160
18
8
8
11
22
8
0.75
25
15
13
12
35
17
2.2
30
240
30
15
15
18
35
15
4
50
1.1
40
25
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73454
S09-0228-Rev. C, 09-Feb-09



Vishay Si4884BDY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50 1.2
VGS = 10 V thru 4 V
40
30
20
1.0
0.8
0.6
0.4
10
0
0.0
0.014
3V
0.3 0.6 0.9 1.2
VDS - Drain-to-Source Voltage (V)
Output Characteristics
1.5
0.2
0.0
1.0
2000
0.012
1600
Si4884BDY
Vishay Siliconix
TC = 125 °C
25 °C
- 55 °C
1.4 1.8 2.2 2.6
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
3.0
Ciss
0.010
0.008
VGS = 4.5 V
VGS = 10 V
1200
800
0.006
0.004
0
10 20 30 40 50
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 12 A
8
VDS = 10 V
6 VDS = 15 V
4 VDS = 20 V
400
0
0
Crss
Coss
6 12 18 24
VDS - Drain-to-Source Voltage (V)
Capacitance
1.6
ID = 10 A
1.4
1.2
1.0
30
2 0.8
0
0 5 10 15 20 25
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73454
S09-0228-Rev. C, 09-Feb-09
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