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Si4884BDY Datasheet, Equivalent, N-Channel MOSFET.N-Channel MOSFET N-Channel MOSFET |
| Part | Si4884BDY |
|---|---|
| Description | N-Channel MOSFET |
| Feature | N-Channel 30-V (D-S) MOSFET
Si4884BDY
V ishay Siliconix
PRODUCT SUMMARY
VDS ( V)
RDS(on) (Ω)
0. 0090 at VGS = 10 V 30 0. 012 at VGS = 4. 5 V ID (A)a 16. 5 1 3. 2 Qg (Typ. ) 10. 5 nC FEATURES • Ha logen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFETs • PWM Optimized S1 S2 S3 G4 SO-8 8D 7D 6D 5D Top View Ordering Informa tion: Si4884BDY-T1-E3 (Lead (Pb)-free) Si4884BDY-T1-GE3 (Lead (Pb)-free and Ha logen-free) D G S N-Channel MOSFET AB SOLUTE MAXIMUM RATINGS TA = 25 °C, unl ess otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuo . |
| Manufacture | Vishay |
| Datasheet |
| Part | Si4884BDY |
|---|---|
| Description | N-Channel MOSFET |
| Feature | N-Channel 30-V (D-S) MOSFET
Si4884BDY
V ishay Siliconix
PRODUCT SUMMARY
VDS ( V)
RDS(on) (Ω)
0. 0090 at VGS = 10 V 30 0. 012 at VGS = 4. 5 V ID (A)a 16. 5 1 3. 2 Qg (Typ. ) 10. 5 nC FEATURES • Ha logen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFETs • PWM Optimized S1 S2 S3 G4 SO-8 8D 7D 6D 5D Top View Ordering Informa tion: Si4884BDY-T1-E3 (Lead (Pb)-free) Si4884BDY-T1-GE3 (Lead (Pb)-free and Ha logen-free) D G S N-Channel MOSFET AB SOLUTE MAXIMUM RATINGS TA = 25 °C, unl ess otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuo . |
| Manufacture | Vishay |
| Datasheet |
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