N-Channel MOSFET. SiZ980BDT Datasheet

SiZ980BDT MOSFET. Datasheet pdf. Equivalent

SiZ980BDT Datasheet
Recommendation SiZ980BDT Datasheet
Part SiZ980BDT
Description Dual N-Channel MOSFET
Feature SiZ980BDT; www.vishay.com SiZ980BDT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode Po.
Manufacture Vishay
Datasheet
Download SiZ980BDT Datasheet




Vishay SiZ980BDT
www.vishay.com
SiZ980BDT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode
PowerPAIR® 6 x 5 G2
S2
S2
S2 6
7
8
5 S1/D2
(Pin 9)
6 mm
1 5 mm
Top View
D1 1
4
D1
3
D1
2
D1
G1
Bottom View
PRODUCT SUMMARY
VDS (V)
RDS(on) max. (Ω) at VGS = 10 V
RDS(on) max. (Ω) at VGS = 4.5 V
Qg typ. (nC)
ID (A) a
Configuration
CHANNEL-1 CHANNEL-2
30 30
0.00439
0.00106
0.00712
0.00172
5.7 24.2
54.8 197
Dual plus integrated Schottky
(SkyFET)
FEATURES
• TrenchFET® Gen IV power MOSFET
• SkyFET® low side MOSFET with integrated Schottky
• Very low RDS x Qg FOM improves efficiency
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• CPU core power
D1
• Computer / server peripherals
• POL
• Synchronous buck converter
G1
N-Channel 1
MOSFET
S1/D2
• Telecom DC/DC
Schottky
G2 Diode
N-Channel 2
MOSFET
S2
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAIR 6 x 5
SiZ980BDT-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
CHANNEL-1
CHANNEL-2
Drain-source voltage
Gate-source voltage
TC = 25 °C
Continuous drain current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed drain current (t = 100 μs)
Continuous source-drain diode current
TC = 25 °C
TA = 25 °C
Single pulse avalanche current
Single pulse avalanche energy
L = 0.1 mH
TC = 25 °C
Maximum power dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature) c, d
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
30
+20, -16
54.8
43.8
23.7 b, c
19 b, c
90
16.7
3.2 b, c
15
11.2
20
12.9
3.8 b, c
2.4 b, c
-55 to +150
260
30
+20, -16
197
158
54.3b, c
43.4 b, c
130
85.4
4.1 b, c
25
31
66
42
5 b, c
3.2 b, c
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
CHANNEL-1
TYP.
MAX.
CHANNEL-2
TYP.
MAX.
UNIT
Maximum junction-to-ambient b, f
Maximum junction-to-case (drain)
t 10 s
RthJA
26
33
20
25 °C/W
Steady state
RthJC
4.7
6.2
1.5
1.9
Notes
a. TC = 25°C
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 68 °C/W for channel-1 and 57 °C/W for channel-2
S20-0029-Rev. A, 27-Jan-2020
1
Document Number: 77251
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay SiZ980BDT
www.vishay.com
SiZ980BDT
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-source breakdown voltage
VDS
VGS = 0 V, ID = 5 mA
Drain-source breakdown voltage
(transient) c
VDSt
VGS = 0 V, ttransient 1 μs
Gate-source threshold voltage
VGS(th)
VDS = VGS, ID = 250 μA
Gate-source leakage
IGSS VDS = 0 V, VGS = +20 V, -16 V
Zero gate voltage drain current
VDS = 30 V, VGS = 0 V
IDSS
VDS = 30 V, VGS = 0 V, TJ = 55 °C
On-state drain current b
Drain-source on-state resistance b
Forward transconductance b
Dynamic a
Input capacitance
Output capacitance
ID(on)
RDS(on)
gfs
VDS 5 V, VGS = 10 V
VGS = 10 V, ID = 15 A
VGS = 10 V, ID = 19 A
VGS = 4.5 V, ID = 12 A
VGS = 4.5 V, ID = 15 A
VDS = 10 V, ID = 15 A
VDS = 10 V, ID = 19 A
Ciss
Coss
Channel-1
VDS = 15 V, VGS = 0 V, f = 1 MHz
Reverse transfer capacitance
Crss/Ciss ratio
Total gate charge
Gate-source charge
Gate-drain charge
Output charge
Crss Channel-2
VDS = 15 V, VGS = 0 V, f = 1 MHz
Qg
Qgs
Qgd
Qoss
VDS = 15 V, VGS = 10 V, ID = 19 A
VDS = 15 V, VGS = 10 V, ID = 19 A
VDS = 15 V, VGS = 4.5 V, ID = 19 A
VDS = 15 V, VGS = 4.5 V, ID = 19 A
Channel-1
VDS = 15 V, VGS = 4.5 V, ID = 19 A
Channel-2
VDS = 15 V, VGS = 4.5 V, ID = 19 A
VDS = 15 V, VGS = 0 V
Gate resistance
Rg f = 1 MHz
MIN. TYP. MAX. UNIT
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
30 -
-
30 -
-
36 -
36 -
-
V
-
1.2 -
2.2
1.1 -
2.2
- - ± 100
nA
- - ± 100
-- 1
- 50 250
μA
-- 5
- 250 2500
20 -
20 -
-
A
-
- 0.00338 0.00439
- 0.000817 0.00106
Ω
- 0.00547 0.00712
- 0.00133 0.00172
- 55
-
S
230 -
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.2
0.16
790
3655
390
2290
38
170
0.046
0.046
12
52.2
5.7
24.2
3
11.7
1.4
5.1
10
70
1.1
0.8
-
-
-
-
-
-
0.092
0.092
18
79
8.6
37
-
-
-
-
-
-
2.2
1.6
pF
nC
Ω
S20-0029-Rev. A, 27-Jan-2020
2
Document Number: 77251
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay SiZ980BDT
www.vishay.com
SiZ980BDT
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Dynamic a
Turn-on delay time
Rise time
td(on)
tr
Channel-1
VDD = 15 V, RL = 1.5 Ω
ID 10 A, VGEN = 4.5 V, Rg = 1 Ω
Ch-1
Ch-2
Ch-1
Ch-2
-
-
-
-
Turn-off delay time
Fall time
td(off)
tf
Channel-2
VDD = 15 V, RL = 1.5 Ω
ID 10 A, VGEN = 4.5 V, Rg = 1 Ω
Ch-1
Ch-2
Ch-1
Ch-2
-
-
-
-
Turn-on delay time
Rise time
td(on)
tr
Channel-1
VDD = 15 V, RL = 1.5 Ω
ID 10 A, VGEN = 10 V, Rg = 1 Ω
Ch-1
Ch-2
Ch-1
Ch-2
-
-
-
-
Turn-off delay time
Fall time
td(off)
tf
Channel-2
VDD = 15 V, RL = 1.5 Ω
ID 10 A, VGEN = 10 V, Rg = 1 Ω
Ch-1
Ch-2
Ch-1
Ch-2
-
-
-
-
Drain-Source Body Diode Characteristics
Continuous source-drain diode
current
IS
TC = 25 °C
Ch-1
Ch-2
-
-
Pulse diode forward current a
ISM
Ch-1
Ch-2
-
-
Body diode voltage
Ch-1
-
VSD
IS = 10 A, VGS = 0 V
Ch-2
-
Body diode reverse recovery time
Body diode reverse recovery charge
trr
Qrr
Channel-1
IF = 10 A, di/dt = 100 A/μs,
TJ = 25 °C
Ch-1
Ch-2
Ch-1
Ch-2
-
-
-
-
Reverse recovery fall time
Reverse recovery Rise time
Ch-1
-
ta
Channel-2
IF = 10 A, di/dt = 100 A/μs,
Ch-2
-
tb
TJ = 25 °C
Ch-1
Ch-2
-
-
Notes
a. Guaranteed by design, not subject to production testing
b. Pulse test; pulse width 300 μs, duty cycle 2 %
c. Derived from UIS characterization data at time of product release. Production data log is not available
TYP.
20
35
100
90
15
35
12
20
10
10
20
10
20
35
10
10
-
-
-
-
0.8
0.51
18
42
18
39
10
21
8
21
MAX. UNIT
40
70
200
180
30
70
24
40
ns
20
20
40
20
40
70
20
20
16.7
85.4
A
90
130
1.2
V
0.77
36
ns
84
36
nC
78
-
-
ns
-
-
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S20-0029-Rev. A, 27-Jan-2020
3
Document Number: 77251
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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