Analog Switch. DG213 Datasheet

DG213 Switch. Datasheet pdf. Equivalent

DG213 Datasheet
Recommendation DG213 Datasheet
Part DG213
Description Quad Complementary CMOS Analog Switch
Feature DG213; DG213 Vishay Siliconix Quad Complementary CMOS Analog Switch DESCRIPTION The versatile DG213 analog.
Manufacture Vishay
Datasheet
Download DG213 Datasheet




Vishay DG213
DG213
Vishay Siliconix
Quad Complementary CMOS Analog Switch
DESCRIPTION
The versatile DG213 analog switch has two NC and two NO
switches. It can be used in various configurations, including
four single-pole single-throw (SPST), two single-pole
double-throw (SPDT), one “T” switch, one DPDT, etc. This
device is fabricated in a Vishay Siliconix’ proprietary high-
voltage silicon gate CMOS process, resulting in lower on-
resistance, lower leakage, higher speed, and lower power
consumption.
This analog switch was designed for a wide variety of
general purpose applications in telecommunications,
instrumentation, process control, computer peripherals, etc.
An improved charge injection compensation design
minimizes switching transients. These switches can handle
up to
± 22 V, and have an improved continuous current
rating of 30 mA. An epitaxial layer prevents latchup.
All switches feature true bi-directional performance in the on
condition, and will block signals to the supply levels in the off
condition.
For additional information, please refer to Application Note
AN208 (FaxBack document #70606).
FEATURES
• ± 22 V supply voltage rating
• TTL and CMOS compatible logic
• Low on-resistance - rDS(on): 45 Ω
• Low leakage - ID(on): 20 pA
• Single supply operation possible
• Extended temperature range
• Fast switching - tON: 85 ns
BENEFITS
• Low charge injection - Q: 1 pC
• Wide analog signal range
• Simple logic interface
• Higher accuracy
• Minimum transients
• Reduced power consumption
• Low cost
APPLICATIONS
• Industrial instrumentation
• Test equipment
• Communications systems
• Computer peripherals
• Portable instruments
• Sample-and-hold circuits
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
IN1
D1
S1
V-
GND
S4
D4
IN4
1
2
3
4
5
6
7
8
Top View
16 IN2
15 D2
14 S2
13 V+
12 VL
11 S3
10 D3
9 IN3
TRUTH TABLE
Logic
0
1
Logic "0" 0.8 V
Logic "1" 2.4 V
SW1, SW4
OFF
ON
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Pb-free
Available
RoHS*
COMPLIANT
SW2, SW3
ON
OFF
Document Number: 70662
S-80263-Rev. G, 11-Feb-08
www.vishay.com
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Vishay DG213
DG213
Vishay Siliconix
ORDERING INFORMATION
Temp. Range
Package
16-Pin Plastic DIP
- 40 °C to 85 °C
16-Pin Narrow SOIC
16-Pin TSSOP
Standard Part Number
DG213DJ
DG213DY
DG213DY-T1
DG213DQ
DG213DQ-T1
Lead (Pb)-free Part Number
DG213DJ-E3
DG213DY-E3
DG213DY-T1-E3
DG213DQ-E3
DG213DQ-T1-E3
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Limit
Voltages Referenced V+ to V-
44
GND
25
Digital Inputsa VS, VD
(V-) - 2 to (V+) + 2
or 30 mA, whichever occurs first
Current, Any Terminal
30
Peak Current (Pulsed at 1 ms, 10 % duty cycle max.)
100
Storage Temperature
- 65 to 125
16-Pin Plastic DIPc
470
Power Dissipationb
16-Pin Narrow SOICd
640
16-Pin TSSOPd
500
Unit
V
mA
°C
mW
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6.5 mW/°C above 75 °C.
d. Derate 7.6 mW/°C above 75 °C.
www.vishay.com
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Document Number: 70662
S-80263-Rev. G, 11-Feb-08



Vishay DG213
SPECIFICATIONS
Parameter
Analog Switch
Analog Signal Ranged
Drain-Source On-Resistance
rDS(on) Match
Source Off Leakage Current
Drain Off Leakage Current
Drain On Leakage Currentf
Digital Control
Input Voltage High
Input Voltage Low
Input Current
Input Capacitance
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make Time Delay
Charge Injection
Source-Off Capacitance
Drain-Off Capacitance
Channel On Capacitance
Off-Isolation
Channel-to-Channel Crosstalk
Power Supply
Positive Supply Current
Negative Supply Current
Logic Supply Current
Power Supply Range for
Continuous Operation
Symbol
VANALOG
rDS(on)
ΔrDS(on)
IS(off)
ID(off)
ID(on)
VINH
VINL
IINL or IINH
CIN
tON
tOFF
tD
Q
CS(off)
CD(off)
CD(on)
OIRR
XTALK
I+
I-
IL
VOP
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V, VL = 5 V,
VIN = 2.4 V, 0.8 Ve
VD = ± 10 V, IS = 1 mA
VS = ± 14 V, VD = ± 14 V
VD = ± 14 V, VS = ± 14 V
VS = VD = 14 V
VINH or VINL
VS = 10 V
See Figure 2
VS = 10 V, See Figure 3
CL = 1000 pF, Vg = 0 V, Rg = 0 Ω
VS = 0 V, f = 1 MHz
VD = VS = 0 V, f = 1 MHz
CL = 15 pF, RL = 50 Ω
VS = 1 VRMS, f = 100 kHz
VIN = 0 or 5 V
DG213
Vishay Siliconix
D Suffix
- 40 °C to 85 °C
Temp.a Min.c Typ.b Max.c Unit
Full
Room
Full
Room
Room
Full
Room
Full
Room
Full
V-
45
- 0.5
-5
- 0.5
-5
- 0.5
- 10
1
± 0.01
± 0.01
± 0.02
V+
60
85
2
0.5
5
0.5
5
0.5
10
V
Ω
nA
Full 2.4
Full
V
0.8
Full - 1
1 µA
Room
5
pF
Room
Room
Room
Room
Room
Room
Room
Room
Room
15
85 130
55 100 ns
25
1 pC
5
5 pF
16
90
dB
95
Room
Full
Room
Full
Room
Full
Full
-1
-5
±3
1
5
µA
1
5
± 22 V
Document Number: 70662
S-80263-Rev. G, 11-Feb-08
www.vishay.com
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