RF IMFET. QPD1006 Datasheet

QPD1006 IMFET. Datasheet pdf. Equivalent

Part QPD1006
Description RF IMFET
Feature QPD1006 450W, 50V, 1.2 – 1.4 GHz, GaN RF IMFET Product Overview The QPD1006 is a 450 W (P3dB) inter.
Manufacture Qorvo
Datasheet
Download QPD1006 Datasheet



QPD1006
QPD1006
450W, 50V, 1.2 1.4 GHz, GaN RF IMFET
Product Overview
The QPD1006 is a 450 W (P3dB) internally matched discrete
GaN on SiC HEMT which operates from 1.2 to 1.4 GHz and
a 50V supply rail. The device is GaN IMFET fully matched
to 50 Ω in an industry standard air cavity package and is
ideally suited for military and civilian radar. The device can
support pulsed and CW operations.
ROHS compliant.
Evaluation boards are available upon request.
Functional Block Diagram
NI-50CW
Key Features
Frequency: 1.2 to 1.4 GHz
Output Power (P3dB)1: 313 W (CW), 468 W (Pulsed)
Linear Gain1: 17.5 dB (CW), 17.8 dB (Pulsed)
Typical DEFF3dB1: 55% (CW), 62.2% (Pulsed)
Operating Voltage: 45 V (CW), 50 V (Pulsed)
Low thermal resistance package
Pulse capable
Note 1: @ 1.3 GHz, 25 °C
Applications
Military radar
Civilian radar
Input
Matching
Network
Output
Matching
Network
Part No.
QPD1006
QPD1006EVB3
Description
1.2  – 1.4 GHz RF IMFET
Evaluation Board
Datasheet Rev. D, July 16, 2018 | Subject to change without notice - 1 of 16 -
www.qorvo.com



QPD1006
QPD1006
450W, 50V, 1.2 1.4 GHz, GaN RF IMFET
Absolute Maximum Ratings1
Recommended Operating Conditions1
Parameter
Rating Units
Breakdown Voltage,BVDG
Gate Voltage Range, VG
Drain Current
+145
-7 to +2
60
V
V
A
Gate Current Range, IG
Power Dissipation, 10% DC
1 mS PW, PDISS
RF Input Power, 10% DC
1 mS PW, 1.3 GHz, T = 25°C
See page 4.
496
+46
mA
W
dBm
Mounting Temperature
(30 Seconds)
Storage Temperature
320
−65 to +150
°C
°C
Notes:
1. Operation of this device outside the parameter ranges
given above may cause permanent damage.
Parameter
Operating Temp. Range
Min Typ Max Units
−40 +25 +85  °C
Drain Voltage Range, VD
Drain Bias Current, IDQ
Drain Current, ID
Gate Voltage, VG4
+28 +50 +55
750
14
– −2.7
V
mA
A
V
Power Dissipation, Pulsed
(PD)2, 3
Power Dissipation, CW (PD)2
445 W
299 W
Notes:
1. Electrical performance is measured under conditions noted
in the electrical specifications table. Specifications are not
guaranteed over all recommended operating conditions.
2. Package base at 85 °C.
3. Pulse Width = 300 uS, Duty Cycle = 30%.
4. To be adjusted to desired IDQ.
RF Characterization EVB CW Performance At 1.2 GHz1
Parameter
Linear Gain, GLIN
Output Power at 3dB compression point, P3dB
Drain Efficiency at 3dB compression point, DEFF3dB
Gain at 3dB compression point, G3dB
Notes:
1. VD = +45V, IDQ = 750mA, TA = 25°C
Min
Typ
17.5
55.4
56.2
14.5
Max
Units
dB
dBm
%
dB
RF Characterization EVB CW Performance At 1.3 GHz1
Parameter
Linear Gain, GLIN
Output Power at 3dB compression point, P3dB
Drain Efficiency at 3dB compression point, DEFF3dB
Gain at 3dB compression point, G3dB
Notes:
1. VD = +45V, IDQ = 750mA, TA = 25°C
Min
Typ
17.3
54.9
54.6
14.3
RF Characterization EVB CW Performance At 1.4 GHz1
Parameter
Linear Gain, GLIN
Output Power at 3dB compression point, P3dB
Drain Efficiency at 3dB compression point, DEFF3dB
Gain at 3dB compression point, G3dB
Notes:
1. VD = +45V, IDQ = 750mA, TA = 25°C
Min
Typ
17.5
54.7
49.4
14.5
Max
Max
Units
dB
dBm
%
dB
Units
dB
dBm
%
dB
Datasheet Rev. D, July 16, 2018 | Subject to change without notice - 2 of 16 -
www.qorvo.com





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