Power Amplifier. TGA2578-CP Datasheet

TGA2578-CP Amplifier. Datasheet pdf. Equivalent

Part TGA2578-CP
Description Power Amplifier
Feature TGA2578-CP 2 – 6 GHz 30 W GaN Power Amplifier Product Description Qorvo’s TGA2578-CP is a packaged .
Manufacture Qorvo
Datasheet
Download TGA2578-CP Datasheet



TGA2578-CP
TGA2578-CP
2 6 GHz 30 W GaN Power Amplifier
Product Description
Qorvo’s TGA2578-CP is a packaged wideband power
amplifier fabricated on Qorvo’s QGaN25 0.25um GaN on
SiC process. Operating from 2 to 6 GHz, the TGA2578-CP
achieves 30 W saturated output power with a power-added
efficiency of > 30 %, and > 26 dB small signal gain.
The TGA2578-CP is offered in a 10-lead 15.2 x 15.2 mm
bolt-down package. The package has a pure Cu base,
offering superior thermal management. The TGA2578-CP
is ideally suited to support both commercial and defense
applications.
Both RF ports have integrated DC blocking capacitors and
are fully matched to 50 Ohms.
Lead-free and RoHS compliant.
Product Features
Frequency Range: 2 – 6 GHz
POUT: 45 dBm @ PIN = 23 dBm
PAE: >30% @ PIN = 23 dBm
Small Signal Gain: > 26 dB
IM3: -30 dBc @ 30 dBm Pout/Tone
Bias: VD = +28V, IDQ = 400mA, VG = −2.8V typical
Package Dimensions: 15.2 x 15.2 x 3.5mm
Package base is pure Cu offering superior thermal
management
Functional Block Diagram
Performance is typical across frequency. Please
reference electrical specification table and data plots for
more details
Applications
Electronic Warfare
Radar
Communications
Test Instrumentation
EMC Amplifier
Ordering Information
Part No.
TGA2578-CP
1096052
Description
2 6 GHz 30 W GaN Power Amplifier
TGA2578-CP Evaluation Board
Data Sheet Rev. D, March 18, 2019
- 1 of 13 -
www.qorvo.com



TGA2578-CP
TGA2578-CP
2 6 GHz 30 W GaN Power Amplifier
Absolute Maximum Ratings
Parameter
Drain Voltage (VD)
Gate Voltage Range (VG)
Drain Current (ID)
Value / Range
40V
8 to 0 V
5A
Gate Current (IG)
Power Dissipation (PDISS), 85°C
Input Power (PIN), 50Ω, 85°C, CW
Input Power (PIN), 85°C, VSWR 3:1,
VD = 28V, CW
Input Power (PIN), 85°C, VSWR 10:1,
VD = 28V, CW
Lead Soldering Temperature
(30 Seconds)
Storage Temperature
See plot page 8
85W
27dBm
27 dBm
25dBm
260 ºC
−55 to 150 ºC
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress ratings
only, and functional operation of the device at these conditions is
not implied.
Recommended Operating Conditions
Parameter
Min Typ. Max Units
Drain Voltage (VD)
+28 V
Drain Current, (IDQ)
400 mA
Gate Voltage (VG)
-2.8 Typical
V
TBASE Range
40 +85 ºC
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Electrical Specifications
Parameter
Operational Frequency Range
Small Signal Gain
Input Return Loss
Output Return Loss
Output Power (@ PIN = 23dBm)
Power Added Efficiency (@ PIN = 23dBm)
IM3 (Pout/tone = 30 dBm/Tone)
IM5 (Pout/tone = 30 dBm/Tone)
Small Signal Gain Temperature Coefficient
Output Power Temperature Coefficient
Min
2
Typ
>26
>12
>5
45
>30
-30
-40
−0.05
-0.02
Test conditions unless otherwise noted: 25 ºC, VD = +28 V, IDQ = 400 mA, VG = −2.8V typical, CW.
Max
6
Units
GHz
dB
dB
dB
dBm
%
dBc
dBc
dB/°C
dBm/°C
Data Sheet Rev. D, March 18, 2019
- 2 of 13 -
www.qorvo.com





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)