Power MOSFET. RD3L08BGN Datasheet

RD3L08BGN MOSFET. Datasheet pdf. Equivalent

Part RD3L08BGN
Description Power MOSFET
Feature RD3L08BGN   Nch 60V 80A Power MOSFET    Datasheet VDSS RDS(on)(Max.) ID PD 60V 5.5mΩ ±80A 119W l.
Manufacture ROHM
Datasheet
Download RD3L08BGN Datasheet



RD3L08BGN
RD3L08BGN
  Nch 60V 80A Power MOSFET
   Datasheet
VDSS
RDS(on)(Max.)
ID
PD
60V
5.5mΩ
±80A
119W
lFeatures
1) Low on - resistance
2) High power small mold package
  (TO-252)
3) Pb-free lead plating ; RoHS compliant
4) Halogen free
5) 100% Rg and UIS tested
lOutline
DPAK
TO-252
 
 
      
lInner circuit
 
lApplication
Switching
lPackaging specifications
Packing
 
Embossed
Tape
Reel size (mm)
330
Type Tape width (mm)
Quantity (pcs)
16
2500
Taping code
TL
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
RD3L08BGN
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
VGS = 10V
Gate - Source voltage
Avalanche current, single pulse
Avalanche energy, single pulse
Power dissipation
Junction temperature
Operating junction and storage temperature range
VDSS
ID*1
IDP*2
VGSS
IAS*3
EAS*3
PD*1
Tj
Tstg
60
±80
±160
±20
40
60
119
150
-55 to +150
V
A
A
V
A
mJ
W
                                                                                        
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© 2019 ROHM Co., Ltd. All rights reserved.
1/11
20190527 - Rev.003    



RD3L08BGN
RD3L08BGN
          
lThermal resistance
Parameter
Thermal resistance, junction - case
                Datasheet
                    
Symbol
RthJC*1
Values
Min. Typ. Max.
- - 1.05
Unit
/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Breakdown voltage
temperature coefficient
 ΔV(BR)DSS  ID = 1mA
   ΔTj     referenced to 25
Zero gate voltage
drain current
IDSS VDS = 60V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V
Gate threshold voltage
Gate threshold voltage
temperature coefficient
VGS(th) VDS = VGS, ID = 100μA
 ΔVGS(th)   ID = 1mA
   ΔTj     referenced to 25
Static drain - source
on - state resistance
RDS(on)*4 VGS = 10V, ID = 80A
VGS = 4.5V, ID = 40A
Gate resistance
RG f = 1MHz, open drain
Forward Transfer
Admittance
|Yfs|*4 VDS = 5V, ID = 40A
Values
Unit
Min. Typ. Max.
60 - - V
- 60 - mV/
- - 10 μA
- - ±500 nA
1.0 - 2.5 V
- -5.6 - mV/
- 4.2 5.5
- 5.7 8.1
- 1.6 -
Ω
30 - - S
*1 Tc =25, Limited only by maximum temperature allowed.
*2 Pw10μs , Duty cycle1%
*3 L 0.05mH, VDD = 30V, RG = 25Ω, Starting Tj = 25Fig.3-1,3-2
*4 Pulsed
                                             
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© 2019 ROHM Co., Ltd. All rights reserved.
2/11
                                          
20190527 - Rev.003





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