Digital transistor. DTA124TM Datasheet

DTA124TM transistor. Datasheet pdf. Equivalent

Part DTA124TM
Description PNP Digital transistor
Feature DTA124T series PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet .
Manufacture ROHM
Datasheet
Download DTA124TM Datasheet



DTA124TM
DTA124T series
PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)
Datasheet
Parameter
VCEO
IC
R1
 
Value
-50V
-100mA
22kΩ
 
lFeatures
1) Built-In Biasing Resistor
2) Built-in bias resistors enable the configuration of
 an inverter circuit without connecting external
 input resistors (see inner circuit) .
3) The bias resistors consist of thin-film resistors
 with complete isolation to allow negative biasing
 of the input. They also have the advantage of
 completely eliminating parasitic effects.
4) Only the on/off conditions need to be set
 for operation, making the circuit design easy.
5) Complementary NPN Types: DTC124T series
6) Lead Free/RoHS Compliant.
lOutline
VMT3
EMT3
 
DTA124TM
(SC-105AA)
UMT3
 
DTA124TE
SOT-416(SC-75A)
SMT3
  
DTA124TUA
DTA124TKA
SOT-323(SC-70)
SOT-346(SC-59)
                            
lInner circuit
lApplication
Switching circuit, Inverter circuit, Interface circuit,
Driver circuit
B: BASE
C: COLLECTOR
E: EMITTER
lPackaging specifications
Part No.
Package
Package
size
DTA124TM
DTA124TE
DTA124TUA
DTA124TKA
VMT3
EMT3
UMT3
SMT3
1212
1616
2021
2928
                      
Taping
code
Reel size Tape width
(mm) (mm)
Basic
ordering
unit.(pcs)
Marking
T2L 180
8
8000
95
TL 180
8
3000
95
T106
180
8
3000
95
T146
180
8
3000
95
                                                                                        
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/7
20121023 - Rev.001



DTA124TM
DTA124T series
 
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DTA124TM
Power dissipation
DTA124TE
DTA124TUA
DTA124TKA
Junction temperature
Range of storage temperature
                Datasheet
Symbol
VCBO
VCEO
VEBO
IC
PD*1
Tj
Tstg
Values
-50
-50
-5
-100
150
150
200
200
150
-55 to +150
Unit
V
V
V
mA
mW
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Collector-base breakdown
voltage
BVCBO IC = -50μA
Collector-emitter breakdown
voltage
BVCEO IC = -1mA
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Input resistance
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R1
IE = -50μA
VCB = -50V
VEB = -4V
IC / IB = -5mA / -0.5mA
VCE = -5V, IC = -1mA
-
Transition frequency
f
*2
T
VCE = -10V, IE = 5mA,
f = 100MHz
*1 Each terminal mounted on a reference footprint
*2 Characteristics of built-in transistor
Values
Unit
Min. Typ. Max.
-50 - - V
-50 - - V
-5 - - V
- - -0.5 μA
- - -0.5 μA
- - -0.3 V
100 250 600 -
15.4 22 28.6 kΩ
- 250 - MHz
                                            
 
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2/7
                                        
20121023 - Rev.001





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