Bipolar Transistor. MG7210WZ Datasheet

MG7210WZ Transistor. Datasheet pdf. Equivalent

Part MG7210WZ
Description Insulated Gate Bipolar Transistor
Feature MG7210WZ 1200V 25A Insulated Gate Bipolar Transistor VCES IC (Nominal) VCE(sat) (Typ.) Max. Possibl.
Manufacture ROHM
Datasheet
Download MG7210WZ Datasheet



MG7210WZ
MG7210WZ
1200V 25A Insulated Gate Bipolar Transistor
VCES
IC (Nominal)
VCE(sat) (Typ.)
Max. Possible Chips per Wafer
1200V
25A
1.7V
407pcs
lFeatures
1) Trench Light Punch Through Type
2) Low Collector - Emitter Saturation Voltage
3) Short Circuit Withstand Time 10μs
lOutline
Wafer
lInner Circuit
(2)
(1)
lApplication
General Inverter
for Automotive and Industrial Use
Heater for Automotive
(3)
Datasheet
(1) Gate
(2) Collector
(3) Emitter
lAbsolute Maximum Ratings
Parameter
Collector - Emitter Voltage, Tj = 25°C
Gate - Emitter Voltage
Collector Current
Pulsed Collector Current
Operating Junction Temperature
*1 Depending on thermal properties of assembly
*2 Pulse width limited by Tjmax.
Symbol
VCES
VGES
IC*1
ICP*2
Tj
Value
1200
±30
*1)
75
-40 to +175
Unit
V
V
A
A
°C
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© 2019 ROHM Co., Ltd. All rights reserved.
1/3
2019.08 - Rev.A



MG7210WZ
MG7210WZ
Datasheet
lDesign Assurance
Parameter
Symbol
Conditions
Short Circuit Withstand Time
VCC 600V,
tsc*3 VGE = 15V,
Tj = 25
Short Circuit Withstand Time
VCC 600V,
tsc*3 VGE = 15V,
Tj = 150
Reverse Bias Safe Operating
Area
IC = 75A, VCC = 1050V,
RBSOA*3 VP = 1200V, VGE = 15V,
RG = 50Ω, Tj = 175
*3 Design assurance without measurement
Values
Min. Typ. Max.
10 -
-
8- -
FULL SQUARE
Unit
μs
μs
-
lElectrical Characteristics (at Tj = 25°C unless otherwise specified, in case of TO-247N package)
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
Unit
Collector - Emitter Breakdown
Voltage
BVCES IC = 10μA, VGE = 0V
1200
-
-
V
Collector Cut - off Current
ICES VCE = 1200V, VGE = 0V
-
- 10 μA
Gate - Emitter Leakage
Current
IGES VGE = ±30V, VCE = 0V
Gate - Emitter Threshold
Voltage
VGE(th) VCE = 5V, IC = 3.8mA
Collector - Emitter Saturation
Voltage
IC = 25A, VGE = 15V,
VCE(sat)*3 Tj = 25°C
Tj = 175°C
Input Capacitance
Cies VCE = 30V,
Output Capacitance
Coes VGE = 0V,
Reverse transfer Capacitance Cres f = 1MHz
Total Gate Charge
Qg VCE = 500V,
Gate - Emitter Charge
Qge IC = 25A,
Gate - Collector Charge
Qgc VGE = 15V
*3 Design assurance without measurement
- - ±500 nA
5.0 6.0 7.0
V
- 1.7 2.1 V
- 2.2 -
- 2095 -
- 166 -
pF
- 12 -
- 67 -
- 19 - nC
- 25 -
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
2/3
2019.08 - Rev.A





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