Speaker Amplifier. BD78306EFJ-M Datasheet

BD78306EFJ-M Amplifier. Datasheet pdf. Equivalent

BD78306EFJ-M Datasheet
Recommendation BD78306EFJ-M Datasheet
Part BD78306EFJ-M
Description Monaural Speaker Amplifier
Feature BD78306EFJ-M; Datasheet Class-AB Speaker Amplifier Series 1.2 W Monaural Speaker Amplifier for Automotive BD783x.
Manufacture ROHM
Datasheet
Download BD78306EFJ-M Datasheet




ROHM BD78306EFJ-M
Datasheet
Class-AB Speaker Amplifier Series
1.2 W
Monaural Speaker Amplifier for Automotive
BD783xxEFJ-M Series (Including products under development)
General Description
BD783xxEFJ-M Series are Class-AB monaural speaker
amplifiers designed for automotive. Class-AB amplifiers
have no requirements for care about EMI noise. Adopting
power package HTSOP-J8 achieves high output power.
Low quiescent current can reduce battery consumption.
Shutdown current is also very low (0.1 µA Typ) and pop
noise level when switching to shutdown is very small, so
this device is suitable for applications in which the mode
often changes between “shutdown state” and “active
state”.
Features
AEC-Q100 Qualified(Note 1)
Pop Noise Reduction Function
Shutdown Function
Protection Functions
- Over Current Protection
- Thermal Shutdown
- Under Voltage Lock Out (UVLO)
Power Package with Thermal Pad HTSOP-J8
(Note 1) Grade2
Applications
Automotive Instruments
Key Specifications
Output Power
1.2 W (Typ)
(VDD = 5 V, RL = 8 Ω, THD+N = 1 %)
Quiescent Current
2.5 mA (Typ)
Shutdown Current
0.1 µA (Typ)
Total Harmonic Distortion + Noise
(RL = 8 Ω, f = 1 kHz)
Output Noise Voltage
0.05 % (Typ)(Note 2)
15 μVRMS (Typ)(Note 2)
Voltage Gain
6.0 dB to 26.0 dB (Typ)
Operating Temperature Range -40 ºC to +105 ºC
(Note 2) Characteristic of BD78306EFJ-M
Package
HTSOP-J8
W (Typ) x D (Typ) x H (Max)
4.90 mm x 6.00 mm x 1.00 mm
HTSOP-J8
Typical Application Circuit
1 SDB
From System
Control
C1
2 BIAS
0.47 µF
Input
Signal
C2
3 INP
0.47 µF
C3
4 INN
0.47 µF
OUTN 8
GND 7
VDD 6
C4
10 µF
VDD
OUTP 5
Figure 1
Product structure : Silicon integrated circuit
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© 2019 ROHM Co., Ltd. All rights reserved.
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ROHM BD78306EFJ-M
BD783xxEFJ-M Series (Including products under development)
Pin Configuration
(TOP VIEW)
SDB 1
BIAS 2
INP 3
INN 4
EXP-PAD
8 OUTN
7 GND
6 VDD
5 OUTP
Caution:
VDD and GND pins adjoin each other. In case that these pins are shorted each other, it may make characteristics of power
supply device worse, or it may damage power supply device.
Considering this point, select power supply device which has protection functions as over current protection.
Pin Description
Pin No.
1
2
3
4
5
6
7
8
-
Pin Name
SDB
BIAS
INP
INN
OUTP
VDD
GND
OUTN
EXP-PAD
Function
Shutdown
Bias
Positive differential input
Negative differential input
Positive output
Power supply
Ground
Negative output
Connect the EXP-PAD to Ground
Control Pin’s Setting
SDB pin
High
Low
Operating Mode
Active
Shutdown
Block Diagram
INP
3
INN
4
BIAS
2
6
VDD
Rf
Ri
Ri
Rf
Ri
Rf
Ri
Rf
Bias
SDB
1
GND
7
Figure 2
OUTP 5
OUTN 8
Over Current
Pro tection
Thermal
Shu tdo wn
Under Vol tage
Lock O ut
Part Number
BD78306EFJ-M
BD78308EFJ-M*1
BD78310EFJ-M
BD78312EFJ-M*1
BD78314EFJ-M*1
BD78316EFJ-M*1
BD78318EFJ-M*1
BD78320EFJ-M*1
BD78322EFJ-M*1
BD78324EFJ-M*1
BD78326EFJ-M
*1 Under Development
Ri[]
(Typ)
90
80
70
60
50
40
36
30
24
20
16
Rf[]
(Typ)
90
80
110
120
130
140
144
150
156
160
164
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© 2019 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 15 • 001
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19.Jul.2019 Rev.001



ROHM BD78306EFJ-M
BD783xxEFJ-M Series (Including products under development)
Absolute Maximum Ratings (Ta = 25 °C)
Parameter
Symbol
Rating
Unit
Supply Voltage
VDDmax
7.0
V
Input Voltage
Vin -0.3 to VDD+0.3 V
Storage Temperature Range
Tstg -55 to +150 °C
Maximum Junction Temperature
Tjmax
150
°C
Caution 1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is
operated over the absolute maximum ratings.
Caution 2: Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the
properties of the chip. In case of exceeding this absolute maximum rating, design a PCB with thermal resistance taken into consideration by increasing
board size and copper area so as not to exceed the maximum junction temperature rating.
Thermal Resistance(Note 1)
Parameter
Symbol
Thermal Resistance (Typ)
1s(Note 3)
2s2p(Note 4)
Unit
HTSOP-J8
Junction to Ambient
θJA 149.4
39.8 °C/W
Junction to Top Characterization Parameter(Note 2)
ΨJT 11.0
9.0 °C/W
(Note 1) Based on JESD51-2A (Still-Air), using a BD78326EFJ-M Chip.
(Note 2) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside
surface of the component package.
(Note 3) Using a PCB board based on JESD51-3.
(Note 4) Using a PCB board based on JESD51-5, 7.
Layer Number of
Measurement Board
Single
Material
FR-4
Board Size
114.3 mm x 76.2 mm x 1.57 mmt
Top
Copper Pattern
Footprints and Traces
Layer Number of
Measurement Board
4 Layers
Thickness
70 μm
Material
FR-4
Board Size
114.3 mm x 76.2 mm x 1.6 mmt
Thermal Via(Note 5)
Pitch
Diameter
1.20 mm
Φ0.30 mm
Top 2 Internal Layers
Copper Pattern
Thickness
Copper Pattern
Thickness
Footprints and Traces
70 μm 74.2 mm x 74.2 mm
(Note 5) This thermal via connects with the copper pattern of all layers.
35 μm
Bottom
Copper Pattern
74.2 mm x 74.2 mm
Thickness
70 μm
Use a thermal design that has sufficient margin in consideration of power dissipation under actual operating conditions. This
IC exposes its frame at the backside of package. Note that this part is assumed to be used after providing heat dissipation
treatment to improve heat dissipation efficiency. Try to put heat dissipation pattern as wide as possible not only on the board
surface but also on the backside.
Under the insufficient heat dissipation and excessive large signal input condition, power dissipation (Pdiss) exceeds
maximum power dissipation (Pd) and thermal shutdown function may operate. Thermal design should be considered so that
Pdiss is lower than Pd. Reference data of Pdiss is listed on P.7.
(Tjmax : Maximum Junction Temperature = 150 °C, Ta : Operating Ambient Temperature[°C], θja : Package Thermal
Resistance[°C/W])
Power dissipation:
= ( − ) / [W]
This IC has thermal shutdown function. Thermal shutdown operates when Tj (junction temperature, which is assumed to be
same as chip temperature) rises over about 180 °C (Typ) and be released when Tj fall about 160 °C (Typ) or less.
Thermal shutdown is designed to protect the IC from temperature condition that exceeds Tjmax = 150 °C, not to protect or
warrant application set.
Note that device reliability is affected if it is used under temperature thermal shutdown operates.
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 15 • 001
3/25
TSZ02201-0C1C0EC00760-1-2
19.Jul.2019 Rev.001







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