PNP Transistor. DTA123TCA Datasheet

DTA123TCA Transistor. Datasheet pdf. Equivalent

Part DTA123TCA
Description PNP Transistor
Feature DTA123TCA PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor) Parameter VCEO IC .
Manufacture ROHM
Datasheet
Download DTA123TCA Datasheet



DTA123TCA
DTA123TCA
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)
Parameter
VCEO
IC
R1
 
Value
-50V
-100mA
2.2kΩ
 
lFeatures
1) Built-In Biasing Resistor
2) Built-in bias resistors enable the configuration of
 an inverter circuit without connecting external
 input resistors (see inner circuit) .
3) Only the on/off conditions need to be set
 for operation, making the circuit design easy.
4) Complementary NPN Types: DTC123TCA
lOutline
SOT-23
 
 
 
 
  
(SST3)
 
              
lInner circuit
Datasheet
lApplication
INVERTER, INTERFACE,DRIVER
lPackaging specifications
Part No.
Package
Package
size
                      
Taping
code
Reel size Tape width
(mm) (mm)
Basic
ordering
unit.(pcs)
Marking
DTA123TCA
SOT-23
(SST3)
2924
T116
180
8
3000
92
                                             
                                                                                        
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© 2018 ROHM Co., Ltd. All rights reserved.
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20171120 - Rev.001



DTA123TCA
DTA123TCA
          
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
                Datasheet
Symbol
VCBO
VCEO
VEBO
IC
PD*1
PD*2
Tj
Tstg
Values
-50
-50
-5
-100
200
350
150
-55 to +150
Unit
V
V
V
mA
mW
mW
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Collector-base breakdown
voltage
BVCBO IC = -50μA
Collector-emitter breakdown
voltage
BVCEO IC = -1mA
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Input resistance
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R1
IE = -50μA
VCB = -50V
VEB = -4V
IC = -5mA, IB = -0.25mA
VCE = -5V, IC = -1mA
-
Transition frequency
f
*3
T
VCE = -10V, IE = 5mA,
f = 100MHz
*1 Each terminal mounted on a reference land.
*2 Mounted on a ceramic board(7.0×5.0×0.6mm).
*3 Characteristics of built-in transistor
Values
Unit
Min. Typ. Max.
-50 - - V
-50 - - V
-5 - - V
- - -500 nA
- - -500 nA
- - -300 mV
100 250 600 -
1.54 2.2 2.86 kΩ
- 250 - MHz
                                            
 
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© 2018 ROHM Co., Ltd. All rights reserved.
2/4
                                        
20171120 - Rev.001





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