Power Transistor. AONS660A70F Datasheet

AONS660A70F Transistor. Datasheet pdf. Equivalent

Part AONS660A70F
Description N-Channel Power Transistor
Feature AONS660A70F 700V, a MOS5 TM N-Channel Power Transistor General Description • Proprietary aMOS5TM te.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AONS660A70F Datasheet



AONS660A70F
AONS660A70F
700V, a MOS5 TM N-Channel Power Transistor
General Description
• Proprietary aMOS5TM technology
• Low RDS(ON)
• Optimized switching parameters for better EMI
performance
• Enhanced body diode for robustness and fast reverse
recovery
Applications
• Flyback for SMPS
• Charger,PD Adapter,TV,lighting
Product Summary
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
Eoss @ 400V
100% UIS Tested
100% Rg Tested
800V
34A
< 0.66Ω
14.5nC
1.9mJ
Top View
DFN5x6F
Bottom View
PIN1
PIN1
Top View
S1
S2
S3
G4
8D
7D
6D
5D
D
G
S
Orderable Part Number
AONS660A70F
Package Type
DFN5X6F
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Gate-Source Voltage (dynamic) AC( f>1Hz)
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Continuous Drain
Current
Avalanche Current C
TA=25°C
TA=70°C
L=1mH
Repetitive avalanche energy C
Single pulsed avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
VGS
ID
IDM
IDSM
IAR
EAR
EAS
dv/dt
TC=25°C
Power Dissipation B Derate above 25°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RqJA
RqJC
Form
Tape&Reel
Minimum Order Quantity
3000
Maximum
700
±20
±30
9.6
6.0
34
1.7
1.3
2.1
2.2
19
100
20
138
1.1
4.1
2.6
-55 to 150
Units
V
V
V
A
A
A
mJ
mJ
V/ns
W
W/°C
W
°C
Typ Max Units
25 30 °C/W
45 55 °C/W
0.6 0.9 °C/W
Rev 1.1: February 2020
www.aosmd.com
Page 1 of 6



AONS660A70F
AONS660A70F
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250μA, VGS=0V, TJ=25°C
ID=250μA, VGS=0V, TJ=150°C
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
ID=250μA, VGS=0V
IDSS
Zero Gate Voltage Drain Current
VDS=700V, VGS=0V
VDS=560V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th) Gate Threshold Voltage
VDS=5V, ID=250mA
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=2.5A
gFS Forward Transconductance
VDS=10V, ID=4A
VSD Diode Forward Voltage
IS=2.5A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current C
700
800
V
0.59
V/ oC
1
mA
10
±100 nA
4V
0.55 0.66
Ω
6.3 S
0.82 1.2
V
9.6 A
34 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=100V, f=1MHz
900 pF
23 pF
Effective output capacitance, energy
Co(er)
related I
22 pF
VGS=0V, VDS=0 to 480V, f=1MHz
Co(tr)
Effective output capacitance, time
related J
100 pF
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=100V, f=1MHz
f=1MHz
1.4 pF
2Ω
SWITCHING PARAMETERS
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Trr
Irm
Qrr
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=480V, ID=4A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=400V, ID=4A,
RG=5W
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Peak Reverse Recovery Current
IF=4A, dI/dt=100A/ms, VDS=400V
Body Diode Reverse Recovery Charge
14.5
nC
5.5 nC
2.6 nC
20 ns
8 ns
33 ns
8 ns
260 ns
20 A
3.5 mC
A. The value of R qJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R qJA is the sum of the thermal impedance from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=0.8A, RG=25Ω, Starting TJ=25°C.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
I. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev1.1: February 2020
www.aosmd.com
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