AlphaIGBT. AOGF60B65H2AL Datasheet

AOGF60B65H2AL AlphaIGBT. Datasheet pdf. Equivalent

Part AOGF60B65H2AL
Description AlphaIGBT
Feature AOGF60B65H2AL 650V, 60A AlphaIGBT TM With Soft and Fast Recovery Anti-Parallel Diode General Descri.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AOGF60B65H2AL Datasheet



AOGF60B65H2AL
AOGF60B65H2AL
650V, 60A AlphaIGBT TM
With Soft and Fast Recovery Anti-Parallel Diode
General Description
• Latest AlphaIGBT (αIGBT) Technology
• 650V breakdown voltage
• Very fast and soft recovery freewheeling diode
• High efficient turn-on di/dt controllability
• Very high switching speed
• Low turn-off switching loss and softness
• Very good EMI behavior
Product Summary
VCE
IC (TC=100°C)
VCE(sat) (TJ=25°C)
650V
60A
1.95V
Applications
• Power factor correction
• Very high switching frequency applications
TO3PF
C
AOGF60B65H2AL
E
C
G
G
E
Orderable Part Number Package Type
AOGF60B65H2AL
TO3PF
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Collector-Emitter Voltage
VCE
Gate-Emitter Voltage
Continuous Collector TC=25°C
Current
TC=100°C
VGE
IC
Pulsed Collector Current, Limited by TJmax
Turn-Off SOA, VCE650V, Limited by TJmax
Continuous Diode TC=25°C
Forward Current
TC=100°C
ICM
ILM
IF
Diode Pulsed Current, Limited by TJmax
Power Dissipation
TC=25°C
TC=100°C
IFM
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum Lead Temperature for Soldering
Purpose, 1/8" from case for 5 seconds
TL
Thermal Characteristics
Parameter
Symbol
Maximum Junction-to-Ambient
Maximum IGBT Junction-to-Case
RqJA
RqJC
Maximum Diode Junction-to-Case
RqJC
(1) TO3PF IC,IF follows TO247.
Form
Tube
Minimum Order Quantity
480
AOGF60B65H2AL
650
±30
120(2)
60(2)
180
180
60(2)
30(2)
90
74
29
-55 to 150
300
Units
V
V
A
A
A
A
A
W
°C
°C
AOGF60B65H2AL
30
1.7
2.5
Units
°C/W
°C/W
°C/W
Rev.1.0 February 2020
www.aosmd.com
Page 1 of 8



AOGF60B65H2AL
AOGF60B65H2AL
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVCES Collector-Emitter Breakdown Voltage
VCE(sat) Collector-Emitter Saturation Voltage
VF Diode Forward Voltage
VGE(th) Gate-Emitter Threshold Voltage
ICES Zero Gate Voltage Collector Current
IGES Gate-Emitter Leakage Current
gFS Forward Transconductance
IC=1mA, VGE=0V, TJ=25°C
TJ=25°C
VGE=15V, IC=60A TJ=125°C
TJ=150°C
TJ=25°C
VGE=0V, IF=30A
TJ=125°C
TJ=150°C
VCE=5V, IC=1mA
TJ=25°C
VCE=650V, VGE=0V TJ=125°C
TJ=150°C
VCE=0V, VGE=±30V
VCE=20V, IC=60A
650 - - V
- 1.95 2.5
- 2.45 -
V
- 2.58 -
- 1.88 2.4
- 1.97 -
V
- 1.94 -
- 4.6 -
V
- - 10
- - 1000 mA
- - 5000
- - ±100 nA
- 33 -
S
DYNAMIC PARAMETERS
Cies Input Capacitance
Coes Output Capacitance
VGE=0V, VCC=25V, f=1MHz
Cres Reverse Transfer Capacitance
Qg Total Gate Charge
Qge Gate to Emitter Charge
VGE=15V, VCC=520V, IC=60A
Qgc Gate to Collector Charge
Rg Gate Resistance
VGE=0V, VCC=0V, f=1MHz
SWITCHING PARAMETERS, (Load Inductive, TJ=25°C)
- 2100 -
- 185 -
- 65 -
- 84 -
- 21 -
- 38 -
- 15 -
pF
pF
pF
nC
nC
nC
W
tD(on)
Turn-On Delay Time
- 35 - ns
tr Turn-On Rise Time
- 80 - ns
tD(off)
Turn-Off Delay Time
TJ=25°C
- 168 - ns
tf Turn-Off Fall Time
Eon Turn-On Energy
VGE=15V, VCC=400V, IC=60A,
RG=5W
- 76 - ns
- 2.36 - mJ
Eoff Turn-Off Energy
- 1.17 - mJ
Etotal
Total Switching Energy
- 3.54 - mJ
trr
Qrr
Irm
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
TJ=25°C
IF=30A, di/dt=200A/ms, VCC=400V
-
-
318
0.8
-
-
ns
mC
Diode Peak Reverse Recovery Current
- 6.0
-
A
SWITCHING PARAMETERS, (Load Inductive, TJ=150°C)
tD(on)
Turn-On Delay Time
- 33 - ns
tr Turn-On Rise Time
- 80 - ns
tD(off)
Turn-Off Delay Time
TJ=150°C
- 195 - ns
tf Turn-Off Fall Time
Eon Turn-On Energy
VGE=15V, VCC=400V, IC=60A,
RG=5W
- 75
- 2.53
-
-
ns
mJ
Eoff Turn-Off Energy
- 1.51
-
mJ
Etotal
Total Switching Energy
- 4.04
-
mJ
trr
Qrr
Irm
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
TJ=150°C
IF=30A, di/dt=200A/ms, VCC=400V
-
-
427
1.6
-
-
ns
mC
Diode Peak Reverse Recovery Current
- 7.5
-
A
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0 February 2020
www.aosmd.com
Page 2 of 8





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