N-Channel MOSFET. AOCA32107E Datasheet

AOCA32107E MOSFET. Datasheet pdf. Equivalent

Part AOCA32107E
Description Dual N-Channel MOSFET
Feature AOCA32107E 12V Common-Drain Dual N-Channel MOSFET General Description • Trench Power MOSFET technol.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AOCA32107E Datasheet



AOCA32107E
AOCA32107E
12V Common-Drain Dual N-Channel MOSFET
General Description
• Trench Power MOSFET technology
• Low RSS(ON)
• With ESD protection to improve battery performance and safety
• Common drain configuration for design simplicity
• RoHS and Halogen-Free Compliant
Applications
• Battery protection switch
• Mobile device battery charging and discharging
Product Summary
VSS
RSS(ON) (at VGS=4.5V)
RSS(ON) (at VGS=4.0V)
RSS(ON) (at VGS=3.8V)
RSS(ON) (at VGS=3.1V)
RSS(ON) (at VGS=2.5V)
Typical ESD protection
12V
< 3.7mΩ
< 3.8mΩ
< 4mΩ
< 4.6mΩ
< 5.6mΩ
HBM Class 2
AlphaDFN 3.01x1.52A_10
Top View
Bottom View
G1 G2
1, 2, 7, 8: Source(FET1) 5: Gate(FET1)
Pin1
3, 4, 9, 10: Source(FET2) 6: Gate(FET2)
S1 S2
Orderable Part Number
AOCA32107E
Package Type
AlphaDFN 3.01x1.52A_10
Form
Tape & Reel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Source-Source Voltage
VSS
Gate-Source Voltage
Source Current(DC) Note1
Source Current(Pulse) Note2
Power Dissipation Note1
TA=25°C
TA=25°C
VGS
IS
ISM
PD
Junction and Storage Temperature Range
TJ, TSTG
Rating
12
±8
22
130
2.3
-55 to 150
Thermal Characteristics
Parameter
Symbol
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
t ≤ 10s
Steady-State
RqJA
Note 1. Is rated value is based on bare silicon.Mounted on 70mmx70mm FR-4 board.
Note 2. PW <10 μs pulses, duty cycle 1% max.
Typical
45
55
Minimum Order Quantity
8000
Units
V
V
A
W
°C
Units
°C/W
°C/W
Rev.1.0: February 2020
www.aosmd.com
Page 1 of 5



AOCA32107E
AOCA32107E
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
STATIC PARAMETERS
BVSSS Source-Source Breakdown Voltage
ISSS Zero Gate Voltage Source Current
IGSS
VGS(th)
Gate leakage current
Gate Threshold Voltage
RSS(ON) Static Source to Source On-Resistance
gFS Forward Transconductance
VFSS
Forward Source to Source Voltage
DYNAMIC PARAMETERS
Rg Gate resistance
SWITCHING PARAMETERS
Qg Total Gate Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf Turn-Off Fall Time
Conditions
IS=250mA, VGS=0V
VSS=12V, VGS=0V
VSS=0V, VGS=±8V
VSS=VGS, IS=250mA
VGS=4.5V, IS=5A
VGS=4.0V, IS=5A
VGS=3.8V, IS=5A
VGS=3.1V, IS=5A
VGS=2.5V, IS=5A
VSS=5V, IS=5A
IS=1A,VGS=0V
Test Circuit 6
Test Circuit 1
TJ=55°C
Test Circuit 2
Test Circuit 3
Test Circuit 4
TJ=125°C
Test Circuit 4
Test Circuit 4
Test Circuit 4
Test Circuit 4
Test Circuit 3
Test Circuit 5
f=1MHz
VG1S1=4.5V, VSS=6V, IS=5A
VG1S1=4.5V, VSS=6V, RL=1.2W,
RGEN=3W
Test
Circuit8
Min
12
0.4
2.1
2.9
2.2
2.3
2.4
2.8
Typ
0.7
2.95
4.05
3.05
3.1
3.4
3.9
50
0.57
1.2
32
1.2
3.0
3.1
8.2
Max Units
V
1 μA
5
±10 μA
1.1 V
3.7 mΩ
5.0
3.8
4.0
4.6
5.6
S
1V
nC
μs
μs
μs
μs
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT
DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: February 2020
www.aosmd.com
Page 2 of 5





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