N-Channel MOSFET. AONY36356 Datasheet

AONY36356 MOSFET. Datasheet pdf. Equivalent

Part AONY36356
Description 30V Dual Asymmetric N-Channel MOSFET
Feature AONY36356 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power MOSFET technology.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AONY36356 Datasheet



AONY36356
AONY36356
30V Dual Asymmetric N-Channel MOSFET
General Description
• Trench Power MOSFET technology
• Low RDS(ON) at 4.5V Vgs
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Applications
• DC/DC Converters in Computer
• See Note I
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
Q1 Q2
30V 30V
32A 32A
< 6.1mΩ < 3.8mΩ
< 9.6mΩ < 4.7mΩ
100% UIS Tested
100% Rg Tested
Top View
DFN 5X6B
S2
PIN1
Bottom View
S2 G2
S2
(S1/D2)
D1
G1
D1
D1
D1
PIN1
Top View
Bottom View
Orderable Part Number
AONY36356
Package Type
DFN 5x6B
Form
Minimum Order Quantity
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max Q1
Max Q2
Drain-Source Voltage
VDS 30
30
Gate-Source Voltage
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Continuous Drain
Current
Avalanche Current C
TA=25°C
TA=70°C
Avalanche energy L=0.01mH
TC=25°C
Power Dissipation B TC=100°C
C
VGS
ID
IDM
IDSM
IAS
EAS
PD
±20
32
30
114
17.5
14
55
15
22
8.7
±12
32
32
128
24
19
36
6
33
13
TA=25°C
Power Dissipation A TA=70°C
PDSM
2.9
1.9
3.4
2.2
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RqJA
RqJC
Typ Q1 Typ Q2 Max Q1 Max Q2
35 30 42 36
65 60 82 75
4.5 3 5.7 3.8
Units
°C/W
°C/W
°C/W
Rev.1.0: January 2019
www.aosmd.com
Page 1 of 10



AONY36356
AONY36356
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250μA, VGS=0V
VDS=30V, VGS=0V
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
VDS=0V, VGS=±20V
VDS=VGS, ID=250mA
VGS=10V, ID=20A
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
Forward Transconductance
VDS=5V, ID=20A
Diode Forward Voltage
IS=1A, VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
30
1.3
V
1 μA
5
±100 nA
1.7 2.1
V
5.1 6.1 mΩ
7.2 8.8
7.7 9.6
100 S
0.7 1 V
30 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
f=1MHz
920 pF
300 pF
35
1.1 2.2
pF
3.3 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=20A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=0.75W,
RGEN=3W
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=20A, di/dt=500A/ms
Qrr Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/ms
13 20
69
2.5
2
7
3.5
20.5
2.5
11
18
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150 °C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature T J(MAX)=150°C.
D. The RqJA is the sum of the thermal impedance from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsin k, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
I. For application requiring slow >1ms turn-on/turn-off, please consult AOS FAE for proper product selection.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: January 2019
www.aosmd.com
Page 2 of 10





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