Power Transistor. AOB360A70L Datasheet

AOB360A70L Transistor. Datasheet pdf. Equivalent

Part AOB360A70L
Description N-Channel Power Transistor
Feature AOT360A70L/AOTF360A70L/AOB360A70L 700V, a MOS5 TM N-Channel Power Transistor General Description • .
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AOB360A70L Datasheet



AOB360A70L
AOT360A70L/AOTF360A70L/AOB360A70L
700V, a MOS5 TM N-Channel Power Transistor
General Description
• Proprietary aMOS5TM technology
• Low RDS(ON)
• Optimized switching parameters for better EMI
performance
• Enhanced body diode for robustness and fast
reverse recovery
Applications
• Flyback for SMPS
• Charger ,PD Adapter, TV, lighting.
Product Summary
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
Eoss @ 400V
100% UIS Tested
100% Rg Tested
800V
48A
< 0.36Ω
22.5nC
2.8mJ
TO-220
TO-220F
TO-263
D2PAK
D
D
AOT360A70L
S
GD
AOTF360A70L
S
D
G
G
AOB360A70L
S
G
S
Orderable Part Number
AOB360A70L
AOT360A70L
AOTF360A70L
Package Type
TO263
TO220 Green
TO220F Green
Form
Tape&Reel
Tube
Tube
Minimum Order Quantity
800
1000
1000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT(B)360A70L
AOTF360A70L
Drain-Source Voltage
VDS
700
Gate-Source Voltage
Continuous Drain TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C L=1mH
Repetitive avalanche energy C
Single pulsed avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
VGS
ID
IDM
IAR
EAR
EAS
dv/dt
±20
12 12*
7.6 7.6*
48
3.4
5.8
50
100
20
TC=25°C
Power Dissipation B Derate above 25°C
PD
156
1.25
29.5
0.23
Units
V
V
A
A
mJ
mJ
V/ns
W
W/°C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TJ, TSTG
TL
-55 to 150
300
°C
°C
Thermal Characteristics
Parameter
Symbol
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
RqJA
RqCS
Maximum Junction-to-Case
RqJC
* Drain current limited by maximum junction temperature.
AOT(B)360A70L
65
0.5
0.8
AOTF360A70L
65
---
4.2
Units
°C/W
°C/W
°C/W
Rev1.0: June 2019
www.aosmd.com
Page 1 of 6



AOB360A70L
AOT360A70L/AOTF360A70L/AOB360A70L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250μA, VGS=0V, TJ=25°C
ID=250μA, VGS=0V, TJ=150°C
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
ID=250μA, VGS=0V
IDSS
Zero Gate Voltage Drain Current
VDS=700V, VGS=0V
VDS=560V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th) Gate Threshold Voltage
VDS=5V, ID=250mA
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=6A
gFS Forward Transconductance
VDS=10V, ID=6A
VSD Diode Forward Voltage
IS=6A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current C
700
800
V
0.6 V/ oC
4
0.316
10
0.86
1
10
±100
0.36
1.2
12
48
mA
nA
V
Ω
S
V
A
A
DYNAMIC PARAMETERS
Ciss
Coss
Co(er)
Co(tr)
Input Capacitance
Output Capacitance
Effective output capacitance, energy
related H
Effective output capacitance, time
related I
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0 to 480V, f=1MHz
1360
34
32
147
pF
pF
pF
pF
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=100V, f=1MHz
f=1MHz
1.7 pF
2Ω
SWITCHING PARAMETERS
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Trr
Irm
Qrr
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=480V, ID=6A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=400V, ID=6A,
RG=5W
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Peak Reverse Recovery Current
IF=6A, dI/dt=100A/ms, VDS=400V
Body Diode Reverse Recovery Charge
22.5
nC
9 nC
6.3 nC
24.5
ns
17 ns
34.5
ns
13 ns
310 ns
24.5
4.8
A
mC
A. The value of R qJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting
the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R qJA is the sum of the thermal impedance from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=1.3A, RG=25Ω, Starting TJ=25°C.
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev1.0: June 2019
www.aosmd.com
Page 2 of 6





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