Power MOSFET. RCJ050N25 Datasheet

RCJ050N25 MOSFET. Datasheet pdf. Equivalent

RCJ050N25 Datasheet
Recommendation RCJ050N25 Datasheet
Part RCJ050N25
Description Power MOSFET
Feature RCJ050N25; RCJ050N25 Nch 250V 5.0A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 250V 1360mW 5.0A 30W lF.
Manufacture ROHM
Datasheet
Download RCJ050N25 Datasheet




ROHM RCJ050N25
RCJ050N25
Nch 250V 5.0A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
250V
1360mW
5.0A
30W
lFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
5) Pb-free lead plating ; RoHS compliant
6) 100% Avalanche tested
lApplication
Switching Power Supply
Automotive Motor Drive
Automotive Solenoid Drive
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Tc = 25°C
Tc = 100°C
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
Power dissipation
Junction temperature
Tc = 25°C
Ta = 25°C *4
Range of storage temperature
lOutline
(2)
LPT(S)
(SC-83)
(1)
(3)
lInner circuit
(1) Gate
(2) Drain
(3) Source
*1 BODY DIODE
lPackaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Quantity (pcs)
Taping code
Marking
Taping
330
24
1,000
TL
RCJ050N25
Symbol
Value
Unit
VDSS
250
V
ID *1
5.0
A
ID *1
2.7
A
ID,pulse *2
20
A
VGSS
30
V
EAS *3
1.82
mJ
IAR *3
2.5
A
PD
30
W
PD
1.56
W
Tj
150
°C
Tstg
-55 to +150
°C
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© 2012 ROHM Co., Ltd. All rights reserved.
1/12
2019.05 - Rev.B



ROHM RCJ050N25
RCJ050N25
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient *4
Soldering temperature, wavesoldering for 10s
Data Sheet
Symbol
RthJC
RthJA
Tsold
Values
Unit
Min. Typ. Max.
-
-
4.16 °C/W
-
-
80 °C/W
-
-
265 °C
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA
250
-
VDS = 250V, VGS = 0V
Zero gate voltage drain current
IDSS
-
-
Tj = 25°C
-
V
10
mA
Gate - Source leakage current
IGSS VGS = 30V, VDS = 0V
-
-
10 nA
Gate threshold voltage
VGS (th) VDS = 10V, ID = 1mA
3.5
-
5.5
V
Static drain - source
on - state resistance
VGS = 10V, ID = 2.5A
RDS(on) *5 VGS = 10V, ID = 2.5A
Tj = 125°C
-
970 1360
mW
-
2100 2950
Forward transfer admittance
gfs
VDS = 10V, ID = 2.5A
1.25 2.50
-
S
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© 2012 ROHM Co., Ltd. All rights reserved.
2/12
2019.05 - Rev.B



ROHM RCJ050N25
RCJ050N25
Data Sheet
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Input capacitance
Ciss
VGS = 0V
-
350
-
Output capacitance
Coss VDS = 25V
-
30
-
pF
Reverse transfer capacitance
Crss f = 1MHz
-
15
-
Turn - on delay time
td(on) *5 VDD 125V, VGS = 10V
-
15
-
Rise time
Turn - off delay time
tr *5
td(off) *5
ID = 2.5A
RL = 49.9W
-
16
-
ns
-
18
-
Fall time
tf *5
RG = 10W
-
10
-
lGate Charge characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Total gate charge
Gate - Source charge
Gate - Drain charge
Gate plateau voltage
Qg *5 VDD 125V
-
8.5
-
Qgs *5 ID = 5.0A
-
3.5
-
nC
Qgd *5 VGS = 10V
-
3.5
-
V(plateau) VDD 125V, ID = 5.0A
-
8.0
-
V
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Continuous source current
Pulsed source current
Forward voltage
Reverse recovery time
Reverse recovery charge
IS *1
ISM *2
VSD *5
trr *5
Qrr *5
Tc = 25°C
VGS = 0V, IS = 5.0A
IS = 2.5A
di/dt = 100A/ms
-
-
5.0
A
-
-
20
A
-
-
1.5
V
-
90
-
ns
-
225
-
nC
*1 Limited only by maximum temperature allowed.
*2 Pw 10ms, Duty cycle 1%
*3 L 500mH, VDD = 50V, Rg = 25W, starting Tj = 25°C
*4 Mounted on a epoxy PCB FR4 (25mm × 27mm × 0.8mm)
*5 Pulsed
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© 2012 ROHM Co., Ltd. All rights reserved.
3/12
2019.05 - Rev.B







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