Power MOSFET. RCJ050N25 Datasheet

RCJ050N25 MOSFET. Datasheet pdf. Equivalent

Part RCJ050N25
Description Power MOSFET
Feature RCJ050N25 Nch 250V 5.0A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 250V 1360mW 5.0A 30W lF.
Manufacture ROHM
Total Page 13 Pages
Datasheet
Download RCJ050N25 Datasheet



RCJ050N25
RCJ050N25
Nch 250V 5.0A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
250V
1360mW
5.0A
30W
lFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
5) Pb-free lead plating ; RoHS compliant
6) 100% Avalanche tested
lApplication
Switching Power Supply
Automotive Motor Drive
Automotive Solenoid Drive
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Tc = 25°C
Tc = 100°C
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
Power dissipation
Junction temperature
Tc = 25°C
Ta = 25°C *4
Range of storage temperature
lOutline
LPT(S)
(SC-83)
TO-263(D2PAK)
(2)
(1)
(3)
lInner circuit
(1) Gate
(2) Drain
(3) Source
*1 BODY DIODE
lPackaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Taping
330
24
1,000
TL
RCJ050N25
Symbol
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
EAS *3
IAR *3
PD
PD
Tj
Tstg
Value
250
5.0
2.7
20
30
1.82
2.5
30
1.56
150
-55 to +150
Unit
V
A
A
A
V
mJ
A
W
W
°C
°C
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/12
2012.09 - Rev.A



RCJ050N25
RCJ050N25
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient *4
Soldering temperature, wavesoldering for 10s
Data Sheet
Symbol
RthJC
RthJA
Tsold
Values
Min. Typ. Max.
Unit
- - 4.16 °C/W
- - 80 °C/W
- - 265 °C
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA
Zero gate voltage drain current
VDS = 250V, VGS = 0V
IDSS
Tj = 25°C
Gate - Source leakage current
IGSS VGS = 30V, VDS = 0V
Gate threshold voltage
VGS (th) VDS = 10V, ID = 1mA
Static drain - source
on - state resistance
VGS = 10V, ID = 2.5A
RDS(on) *5 VGS = 10V, ID = 2.5A
Tj = 125°C
Forward transfer admittance
gfs VDS = 10V, ID = 2.5A
Values
Min. Typ. Max.
250 -
-
- - 10
- - 10
3.5 - 5.5
- 970 1360
- 2100 2950
1.25 2.50
-
Unit
V
mA
nA
V
mW
S
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2/12
2012.09 - Rev.A





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