N-Channel MOSFET. AONS36316 Datasheet

AONS36316 MOSFET. Datasheet pdf. Equivalent

Part AONS36316
Description N-Channel MOSFET
Feature AONS36316 30V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) •.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AONS36316 Datasheet



AONS36316
AONS36316
30V N-Channel MOSFET
General Description
• Trench Power MOSFET technology
• Low RDS(ON)
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
30V
32A
< 4.1mΩ
< 4.9mΩ
Applications
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
• See Note I
100% UIS Tested
100% Rg Tested
Top View
DFN5X6
Bottom View
Top View
D
PIN1
S
S
S
G
PIN1
1
2
3
4
8D
7D
6D
5 DG
S
Orderable Part Number
AONS36316
Package Type
DFN 5x6
Form
Tape & Reel
Minimum Order Quantity
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Continuous Drain
Current
Avalanche Current C
TA=25°C
TA=70°C
Avalanche energy L=0.01mH
TC=25°C
Power Dissipation B TC=100°C
C
VGS
ID
IDM
IDSM
IAS
EAS
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±12
32
32
128
28
22
36
6
26
10
5
3.2
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RqJA
RqJC
Typ
20
45
4
Max
25
55
4.8
Units
°C/W
°C/W
°C/W
Rev.1.0: September 2018
www.aosmd.com
Page 1 of 6



AONS36316
AONS36316
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250μA, VGS=0V
VDS=30V, VGS=0V
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
VDS=0V, VGS=±12V
VDS=VGS, ID=250mA
VGS=10V, ID=20A
Static Drain-Source On-Resistance
Forward Transconductance
VGS=4.5V, ID=20A
VDS=5V, ID=20A
Diode Forward Voltage
IS=1A, VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
30
1.1
V
1 μA
5
±100 nA
1.5 1.9 V
3.4 4.1 mΩ
4.7 5.7
3.9 4.9
100 S
0.7 1 V
30 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
f=1MHz
2005
430
50
1.1 2.2
3.3
pF
pF
pF
Ω
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=15V, ID=20A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=0.75W,
RGEN=3W
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=20A, di/dt=500A/ms
Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/ms
30 42 nC
13.5 19 nC
5.5 nC
3.5 nC
8 ns
3 ns
34 ns
5.5 ns
12 ns
21 nC
A. The value of RqJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150 °C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature T J(MAX)=150°C.
D. The RqJA is the sum of the thermal impedance from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsin k, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
I. For application requiring slow >1ms turn -on/turn-off, please consult AOS FAE for proper product selection .
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: September 2018
www.aosmd.com
Page 2 of 6





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