Power Transistor. AOD950A70 Datasheet

AOD950A70 Transistor. Datasheet pdf. Equivalent

Part AOD950A70
Description N-Channel Power Transistor
Feature AOD950A70/AOI950A70 700V, a MOS5 TM N-Channel Power Transistor General Description • Proprietary aM.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AOD950A70 Datasheet



AOD950A70
AOD950A70/AOI950A70
700V, a MOS5 TM N-Channel Power Transistor
General Description
• Proprietary aMOS5TM technology
• Low RDS(ON)
• Optimized switching parameters for better EMI
performance
• Enhanced body diode for robustness and fast
reverse recovery
Applications
• Flyback for SMPS
• Charger, Adapter, lighting
Product Summary
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
Eoss @ 400V
100% UIS Tested
100% Rg Tested
800V
20A
< 0.95Ω
10nC
1.2mJ
TO252
Top View
D
Bottom View
D
D
S
D
S
G AOD950A70
GD SG
S
Orderable Part Number
AOD950A70
AOI950A70
TO-251A
Top View
D
Bottom View
D
D
GDS
AOI950A70
Package Type
TO-252
TO-251A
S DG
Form
Tape & Reel
Tube
G
S
Minimum Order Quantity
2500
3500
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol AOD950A70
AOI950A70
Drain-Source Voltage
VDS 700
Gate-Source Voltage
Gate-Source Voltage (dynamic) AC( f>1Hz)
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C L=1mH
Repetitive avalanche energy C
Single pulsed avalanche energy H
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
VGS
VGS
ID
IDM
IAR
EAR
EAS
dv/dt
±20
±30
5
3.2
20
0.8
0.3
7.5
100
20
TC=25°C
Power Dissipation B Derate above 25°C
PD
56.5
0.45
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TJ, TSTG
TL
-55 to 150
300
Units
V
V
V
A
A
mJ
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Maximum Junction-to-CaseD.F
Symbol
RqJA
RqCS
RqJC
AOD950A70
45
-
2.2
AOI950A70
55
0.5
Units
°C/W
°C/W
°C/W
Rev.1.0: June 2018
www.aosmd.com
Page 1 of 6



AOD950A70
AOD950A70/AOI950A70
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250μA, VGS=0V, TJ=25°C
ID=250μA, VGS=0V, TJ=150°C
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
ID=250μA, VGS=0V
IDSS
Zero Gate Voltage Drain Current
VDS=700V, VGS=0V
VDS=560V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th) Gate Threshold Voltage
VDS=5V, ID=250mA
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=1A
gFS Forward Transconductance
VDS=10V, ID=1A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current C
700 -
- 800
-
-
V
- 0.6
- V/ oC
- -1
mA
- - 10
- - ±100 nA
2.9 3.5 4.1 V
-
0.86 0.95
Ω
- 2.2 - S
-
0.8 1.2
V
- - 5A
- - 20 A
DYNAMIC PARAMETERS
Ciss
Coss
Co(er)
Co(tr)
Input Capacitance
Output Capacitance
Effective output capacitance, energy
related H
Effective output capacitance, time
related I
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0 to 480V, f=1MHz
- 461 -
- 15 -
- 13.3 -
- 59 -
pF
pF
pF
pF
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=100V, f=1MHz
f=1MHz
- 1.4 - pF
- 5.9 - Ω
SWITCHING PARAMETERS
Qg Total Gate Charge
- 10
nC
Qgs Gate Source Charge
VGS=10V, VDS=480V, ID=2.5A
- 2.6 - nC
Qgd Gate Drain Charge
- 2.8 - nC
tD(on)
Turn-On DelayTime
- 16 - ns
tr Turn-On Rise Time
VGS=10V, VDS=400V, ID=2.5A,
- 7 - ns
tD(off)
Turn-Off DelayTime
RG=5W
- 33 - ns
tf Turn-Off Fall Time
- 12 - ns
trr Body Diode Reverse Recovery Time
- 200 - ns
Irm
Peak Reverse Recovery Current
IF=2.5A, dI/dt=100A/ms, VDS=400V
-
13
-
A
Qrr Body Diode Reverse Recovery Charge
- 2 - mC
A. The value of R qJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R qJA is the sum of the thermal impedance from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=0.5A, , RG=25Ω, Starting TJ=25°C.
I. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: June 2018
www.aosmd.com
Page 2 of 6





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)