N-Channel MOSFET. AOSS62934 Datasheet

AOSS62934 MOSFET. Datasheet pdf. Equivalent

Part AOSS62934
Description N-Channel MOSFET
Feature AOSS62934 100V N-Channel AlphaSGT TM General Description • Trench Power AlphaSGTTM technology • Low.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AOSS62934 Datasheet



AOSS62934
AOSS62934
100V N-Channel AlphaSGT TM
General Description
• Trench Power AlphaSGTTM technology
• Low RDS(ON)
• Low Gate Charge
• Optimized for fast-switching applications
• RoHS and Halogen-Free Compliant
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
100V
2A
< 140mΩ
< 180mΩ
Applications
• Synchronous Rectification in DC/DC and AC/DC
Converters
• Isolated DC/DC Converters in Telecom and Industrial
SOT23
Top View
Bottom View
D
D
D
S
G
G
S
G
S
Orderable Part Number
AOSS62934
Package Type
SOT23
Form
Minimum Order Quantity
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
TA=25°C
Power Dissipation B TA=70°C
VGS
ID
IDM
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
100
±20
2.0
1.5
8
1.4
0.9
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
RqJA
RqJL
Typ
70
100
63
Max
90
125
80
Units
°C/W
°C/W
°C/W
Rev.1.0: September 2018
www.aosmd.com
Page 1 of 5



AOSS62934
AOSS62934
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250mA, VGS=0V
VDS=100V, VGS=0V
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
VDS=0V, VGS=±20V
VDS=VGS, ID=250mA
VGS=10V, ID=2A
Static Drain-Source On-Resistance
VGS=4.5V, ID=1A
Forward Transconductance
VDS=5V, ID=2A
Diode Forward Voltage
IS=1A, VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=50V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
Qoss
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=50V, ID=2A
Gate Drain Charge
Output Charge
Turn-On DelayTime
VGS=0V, VDS=50V
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=50V, RL=25W,
RGEN=3W
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=2A, di/dt=500A/ms
Body Diode Reverse Recovery Charge IF=2A, di/dt=500A/ms
Min
100
1.7
Typ
2.2
117
210
140
5
0.8
250
19
2.5
10.5
3.8
1.8
0.8
0.8
3
5
3
19
3
12
27
Max Units
1
5
±100
2.7
140
252
180
1.1
2
V
μA
nA
V
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RqJA is the sum of the thermal impedance from junction to lead RqJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: September 2018
www.aosmd.com
Page 2 of 5





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