N-Channel MOSFET. AONR32314 Datasheet

AONR32314 MOSFET. Datasheet pdf. Equivalent

Part AONR32314
Description N-Channel MOSFET
Feature AONR32314 30V N-Channel MOSFET General Description • Latest advanced trench technology • Low RDS(ON.
Manufacture Alpha & Omega Semiconductors
Total Page 6 Pages
Datasheet
Download AONR32314 Datasheet



AONR32314
AONR32314
30V N-Channel MOSFET
General Description
• Latest advanced trench technology
• Low RDS(ON)
• High Current capability
• RoHS and Halogen-Free Compliant
Applications
• Notebook AC-in load switch
• Battery protection charge/discharge
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
100% UIS Tested
100% Rg Tested
30V
30A
< 8.7mΩ
< 12.3mΩ
DFN 3x3_EP
Top View
Bottom View
Top View
D
PIN1
Orderable Part Number
AONR32314
PIN1
S1
S2
S3
G4
8D
7D
6D
5D
G
S
Package Type
DFN 3X3
Form
Tape & Reel
Minimum Order Quantity
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Continuous Drain
Current
Avalanche Current C
TA=25°C
TA=70°C
Avalanche energy L=0.05mH
TC=25°C
Power Dissipation B TC=100°C
C
VGS
ID
IDM
IDSM
IAS
EAS
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
30
25.5
90
17
13.5
33
27
24
9.6
4.1
2.6
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RqJA
RqJC
Typ
24
47
4.2
Max
30
60
5.2
Units
°C/W
°C/W
°C/W
Rev.2.0: March 2018
www.aosmd.com
Page 1 of 6



AONR32314
AONR32314
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250mA, VGS=0V
VDS=30V, VGS=0V
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
VDS=0V, VGS=±20V
VDS=VGS, ID=250mA
VGS=10V, ID=17A
Static Drain-Source On-Resistance
Forward Transconductance
VGS=4.5V, ID=14A
VDS=5V, ID=17A
Diode Forward Voltage
IS=1A, VGS=0V
Maximum Body-Diode Continuous Current G
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=15V, ID=17A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=0.75W,
RGEN=3W
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=17A, di/dt=500A/ms
Body Diode Reverse Recovery Charge IF=17A, di/dt=500A/ms
Min
30
1.25
1
Typ
1.75
7.2
11.2
9.8
53
0.7
1420
150
95
2
22
10
4.7
4
6.5
2.5
22.5
3
7.5
9.0
Max Units
1
5
±100
2.25
8.7
13.5
12.3
1
30
V
μA
nA
V
mΩ
S
V
A
pF
pF
pF
3Ω
32 nC
15 nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RqJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150 °C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature T J(MAX)=150°C.
D. The RqJA is the sum of the thermal impedance from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsin k, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: March 2018
www.aosmd.com
Page 2 of 6





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