P-Channel MOSFET. AOD21357 Datasheet

AOD21357 MOSFET. Datasheet pdf. Equivalent

Part AOD21357
Description P-Channel MOSFET
Feature AOD21357/AOI21357 30V P-Channel MOSFET General Description • Latest advanced trench technology • Lo.
Manufacture Alpha & Omega Semiconductors
Total Page 6 Pages
Datasheet
Download AOD21357 Datasheet



AOD21357
AOD21357/AOI21357
30V P-Channel MOSFET
General Description
• Latest advanced trench technology
• Low RDS(ON)
• High Current Capability
• RoHS and Halogen-Free Compliant
Product Summary
VDS
ID (at VGS=-10V)
RDS(ON) (at VGS=-10V)
RDS(ON) (at VGS=-4.5V)
-30V
-70A
< 8mΩ
< 13mΩ
Applications
• Notebook AC-in load switch
• Battery protection charge/discharge
100% UIS Tested
100% Rg Tested
TopView
TO252
DPAK
Bottom View
Top View
TO-251A
IPAK
Bottom View
D
D
D
DS
G
DG
S
G
Orderable Part Number
Package Type
AOD21357
AOI21357
TO-252
TO-251A
DS
S
Form
Tape & Reel
Tube
G
G
D
S
Minimum Order Quantity
2500
3500
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Continuous Drain
Current
Avalanche Current C
TA=25°C
TA=70°C
Avalanche energy L=0.1mH
TC=25°C
Power Dissipation B TC=100°C
C
VGS
ID
IDM
IDSM
IAS
EAS
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
-30
±25
-70
-50
-180
-23
-18
39
76
78
31
6.2
4
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RqJA
RqJC
Typ
15
40
1.3
Max
20
50
1.6
Units
°C/W
°C/W
°C/W
Rev.1.0: November 2018
www.aosmd.com
Page 1 of 6



AOD21357
AOD21357/AOI21357
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=-250mA, VGS=0V
VDS=-30V, VGS=0V
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
VDS=0V, VGS=±25V
VDS=VGS, ID=-250mA
VGS=-10V, ID=-20A
Static Drain-Source On-Resistance
Forward Transconductance
VGS=-4.5V, ID=-18A
VDS=-5V, ID=-20A
Diode Forward Voltage
IS=-1A, VGS=0V
Maximum Body-Diode Continuous Current G
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-15V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=-10V, VDS=-15V, ID=-20A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=0.75W,
RGEN=3W
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=-20A, di/dt=500A/ms
Body Diode Reverse Recovery Charge IF=-20A, di/dt=500A/ms
Min
-30
-1.3
Typ
-1.7
6
8.7
9.8
50
-0.7
2830
430
365
14
50
25
9
12
12.5
18
125
66
32
62
Max Units
-1
-5
±100
-2.3
8
11.5
13
-1
-70
V
μA
nA
V
mΩ
S
V
A
pF
pF
pF
28 Ω
70 nC
35 nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RqJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150 °C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature T J(MAX)=150°C.
D. The RqJA is the sum of the thermal impedance from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsin k, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: November 2018
www.aosmd.com
Page 2 of 6





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