N-Channel MOSFET. AON6266E Datasheet

AON6266E MOSFET. Datasheet pdf. Equivalent

Part AON6266E
Description N-Channel MOSFET
Feature AON6266E 60V N-Channel AlphaSGT TM General Description • Trench Power AlphaSGTTM technology • Low R.
Manufacture Alpha & Omega Semiconductors
Total Page 6 Pages
Datasheet
Download AON6266E Datasheet



AON6266E
AON6266E
60V N-Channel AlphaSGT TM
General Description
• Trench Power AlphaSGTTM technology
• Low RDS(ON)
• Logic Level Gate Drive
• ESD Protected
• Excellent Gate Charge x RDS(ON) Product (FOM)
• RoHS and Halogen-Free Compliant
Applications
• High Frequency Switching and Synchronous
Rectification
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
Typical ESD protection
100% UIS Tested
100% Rg Tested
60V
24A
< 13.2mΩ
< 17.7mΩ
HBM Class 2
Top View
DFN5x6
Bottom View
Top View
D
PIN1
PIN1
1
2
3
4
8
7
6
5
G
S
Orderable Part Number
AON6266E
Package Type
DFN 5x6
Form
Tape & Reel
Minimum Order Quantity
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
Current
Avalanche Current C
TA=25°C
TA=70°C
Avalanche energy
VDS Spike I
Power Dissipation B
L=0.3mH
10µs
TC=25°C
TC=100°C
C
IDSM
IAS
EAS
VSPIKE
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
60
±20
24
21
95
14.5
11.5
14
29
72
26
10.5
5.0
3.2
-55 to 150
Units
V
V
A
A
A
mJ
V
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
20
45
4.0
Max
25
55
4.8
Units
°C/W
°C/W
°C/W
Rev.1.0: February 2017
www.aosmd.com
Page 1 of 6



AON6266E
AON6266E
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=60V, VGS=0V
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS, ID=250µA
VGS=10V, ID=20A
VGS=4.5V, ID=18A
Forward Transconductance
VDS=5V, ID=20A
Diode Forward Voltage
IS=1A, VGS=0V
Maximum Body-Diode Continuous Current G
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=30V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
Qoss
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=30V, ID=20A
Gate Drain Charge
Output Charge
Turn-On DelayTime
VGS=0V, VDS=30V
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=30V, RL=1.5,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=20A, di/dt=500A/µs
Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs
Min
60
1.2
0.6
Typ
1.7
10.7
17.4
14
40
0.72
755
220
20
1.3
13.5
6.5
2.5
3.0
11
5
3
19
3
17
54
Max Units
V
1
µA
5
±10 µA
2.2 V
13.2
mΩ
21.3
17.7 mΩ
S
1V
24 A
pF
pF
pF
2.0 Ω
20 nC
10 nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
I. The spike duty cycle 5% max, limited by junction temperature TJ(MAX)=125°C.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: February 2017
www.aosmd.com
Page 2 of 6





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