N-Channel MOSFET. AOK60N30L Datasheet

AOK60N30L MOSFET. Datasheet pdf. Equivalent

Part AOK60N30L
Description N-Channel MOSFET
Feature AOK60N30L 300V,60A N-Channel MOSFET General Description Product Summary The AOK60N30L is fabricat.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AOK60N30L Datasheet



AOK60N30L
AOK60N30L
300V,60A N-Channel MOSFET
General Description
Product Summary
The AOK60N30L is fabricated using an advanced high
voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability this part can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
Top View
TO-247
350@150
60A
< 0.056
D
AOK60N30L
S
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Maximum Junction-to-Case
Symbol
RθJA
RθCS
RθJC
G
AOK60N30L
300
±30
60
40
200
9.5
1353
2707
5
658
5.3
-55 to 150
300
AOK60N30L
40
0.5
0.19
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev1.0: Sepetember 2017
www.aosmd.com
Page 1 of 5



AOK60N30L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
BVDSS
/∆TJ
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=300V, VGS=0V
VDS=240V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V, ID=250µA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=30A
gFS Forward Transconductance
VDS=40V, ID=30A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=240V, ID=60A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=150V, ID=60A,
RG=25
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=60A,dI/dt=100A/µs,VDS=100V
Body Diode Reverse Recovery Charge IF=60A,dI/dt=100A/µs,VDS=100V
Min Typ Max Units
300
350
V
0.26
V/ oC
1
µA
10
±100 nΑ
2.9 3.5 4.1
V
0.042 0.056
52 S
0.68 1
V
60 A
200 A
3550
410
22
0.8
4438
593
38
1.7
5330
770
54
2.6
pF
pF
pF
70 88 106
21
28
88
222
224
132
250 320 390
11 14.5 18
nC
nC
nC
ns
ns
ns
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=9.5A, VDD=150V, RG=25, Starting TJ=25°C
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev1.0: Sepetember 2017
www.aosmd.com
Page 2 of 5





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)