N-Channel MOSFET. AON1634 Datasheet

AON1634 MOSFET. Datasheet pdf. Equivalent

Part AON1634
Description N-Channel MOSFET
Feature AON1634 30V N-Channel MOSFET General Description Product Summary The AON1634 combines advanced tr.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AON1634 Datasheet



AON1634
AON1634
30V N-Channel MOSFET
General Description
Product Summary
The AON1634 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS =10V)
RDS(ON) (at VGS =4.5V)
RDS(ON) (at VGS =2.5V)
Typical ESD protection
30V
4A
< 54m
< 62m
< 82m
HBM Class 3A
DFN 1.6x1.6A
Top View
Bottom View
S
S
D
G
Pin 1
D
G
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current G
TA=70°C
Pulsed Drain Current C
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
S
Maximum
30
±12
4
3
16
1.8
1.15
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
t 10s
Steady-State
Symbol
RθJA
Typ
56
88
Max
70
110
Units
V
V
A
W
°C
Units
°C/W
°C/W
Rev 1 : Sep. 2012
www.aosmd.com
Page 1 of 5



AON1634
AON1634
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
IDSS Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
TJ=55°C
1
µA
5
IGSS Gate-Body leakage current
VDS=0V, VGS=±10V
±10 µA
VGS(th) Gate Threshold Voltage
VDS=VGS, ID=250µA
0.7 1.05 1.5
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
16
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=4A
VGS=4.5V, ID=3A
TJ=125°C
43.5
68
48
54
84
62
m
m
VGS=2.5V, ID=2A
62 82 m
gFS Forward Transconductance
VDS=5V, ID=4A
15 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
0.75 1
V
IS Maximum Body-Diode Continuous Current
2.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
245 pF
35 pF
20 pF
5.3
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
5.7 10 nC
Qg(4.5V)
Qgs
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=15V, ID=4A
2.6 5 nC
0.5 nC
Qgd Gate Drain Charge
1 nC
tD(on)
Turn-On DelayTime
2 ns
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=3.75,
3.5
ns
tD(off)
Turn-Off DelayTime
RGEN=3
22 ns
tf Turn-Off Fall Time
3.5 ns
trr Body Diode Reverse Recovery Time IF=4A, dI/dt=500A/µs
6.5 ns
Qrr Body Diode Reverse Recovery Charge IF=4A, dI/dt=500A/µs
7.5 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1 : Sep. 2012
www.aosmd.com
Page 2 of 5





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