Complementary MOSFET. AON6667 Datasheet

AON6667 MOSFET. Datasheet pdf. Equivalent

Part AON6667
Description Dual Complementary MOSFET
Feature AON6667 30V Dual Complementary MOSFET General Description • Trench Power MOSFET technology • Low RD.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AON6667 Datasheet



AON6667
AON6667
30V Dual Complementary MOSFET
General Description
• Trench Power MOSFET technology
• Low RDS(ON)
• Low Gate Charge
• Excellent Thermal Performance
• RoHS and Halogen-Free Compliant
Applications
• Pch+Nch Complementary MOSFET for DC-FAN
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
Q1
30V
16A
< 25mΩ
< 35mΩ
Q2
-30V
-16A
< 22mΩ
< 35mΩ
100% UIS Tested
100% Rg Tested
DFN5X6 EP2
PIN1
Top View
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
G1
D1 D2
G2
S1
S2
Orderable Part Number
AON6667
Package Type
DFN 5x6
Form
Tape & Reel
Minimum Order Quantity
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max Q1
Drain-Source Voltage
VDS 30
Gate-Source Voltage
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Continuous Drain
Current
Avalanche Current C
TA=25°C
TA=70°C
Avalanche energy L=0.1mH
C
VGS
ID
IDM
IDSM
IAS
EAS
±20
16
10.5
35
9.5
7.5
12
7
VDS Spike
Power Dissipation B
10µs
TC=25°C
TC=100°C
VSPIKE
PD
36
10
4
TA=25°C
Power Dissipation A TA=70°C
PDSM
3.1
2
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Max Q2
-30
±20
-16
-12.5
-65
11
-8.5
-27
36
-36
20
8
4.1
2.6
Units
V
V
A
A
A
mJ
V
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ Q1
30
55
9
Typ Q2
20
48
5
Max Q1
40
70
12
Max Q2
30
65
6
Units
°C/W
°C/W
°C/W
Rev.1.0: July 2016
www.aosmd.com
Page 1 of 11



AON6667
AON6667
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=30V, VGS=0V
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS, ID=250µA
VGS=10V, ID=10A
Forward Transconductance
Diode Forward Voltage
VGS=4.5V, ID=5A
VDS=5V, ID=10A
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=15V, ID=10A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=1.5,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=10A, di/dt=500A/µs
Body Diode Reverse Recovery Charge IF=10A, di/dt=500A/µs
Min
30
1.5
0.6
Typ
2.1
18.5
27
25
17
0.75
373
67
41
1.8
7.1
3.5
1.2
1.6
4.3
2.8
15.8
3.0
6.0
6.6
Max Units
V
1
µA
5
100 nA
2.6 V
25
mΩ
35
35 mΩ
S
1V
10 A
pF
pF
pF
2.8 Ω
15 nC
7 nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: July 2016
www.aosmd.com
Page 2 of 11





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