N-Channel MOSFET. AOW292 Datasheet

AOW292 MOSFET. Datasheet pdf. Equivalent

Part AOW292
Description N-Channel MOSFET
Feature AOW292 100V N-Channel MOSFET General Description • Trench Power MV MOSFET technology • Low RDS(ON) .
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AOW292 Datasheet



AOW292
AOW292
100V N-Channel MOSFET
General Description
• Trench Power MV MOSFET technology
• Low RDS(ON)
• Low Gate Charge
• Optimized for fast-switching applications
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=6V)
100V
105A
< 4.1mΩ
< 4.9mΩ
Applications
• Synchronus Rectification in DC/DC and AC/DC Converters
• Industrial and Motor Drive applications
100% UIS Tested
100% Rg Tested
TO-262
Top View
Bottom View
DD
D
GDS
SDG
Orderable Part Number
AOW292
Package Type
TO-262
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
Current
Avalanche Current C
TA=25°C
TA=70°C
Avalanche energy L=0.1mH
C
IDSM
IAS
EAS
VDS Spike
Power Dissipation B
10µs
TC=25°C
TC=100°C
VSPIKE
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
15
55
0.35
G
Form
Tube
S
Minimum Order Quantity
1000
Maximum
100
±20
105
105
420
14.5
11.5
60
180
120
300
150
1.9
1.2
-55 to 175
Units
V
V
A
A
A
mJ
V
W
W
°C
Max Units
20 °C/W
65 °C/W
0.5 °C/W
Rev.1.0: February 2015
www.aosmd.com
Page 1 of 6



AOW292
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=100V, VGS=0V
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS, ID=250µA
VGS=10V, ID=20A
VGS=6V, ID=20A
Forward Transconductance
VDS=5V, ID=20A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current G
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=50V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=50V, ID=20A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=50V, RL=2.5,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
Min
100
2.3
0.4
Typ
2.8
3.3
5.4
3.8
90
0.68
6775
557
32
0.8
90
24
13.5
20
11.5
48
10
50
380
Max Units
1
5
±100
3.4
4.1
6.7
4.9
1
105
V
µA
nA
V
mΩ
mΩ
S
V
A
pF
pF
pF
1.2 Ω
126 nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: February 2015
www.aosmd.com
Page 2 of 6





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