Gate Driver. LM5113 Datasheet

LM5113 Driver. Datasheet pdf. Equivalent

Part LM5113
Description 100V Half-Bridge Gate Driver
Feature LM5113 www.ti.com SNVS725F – JUNE 2011 – REVISED APRIL 2013 LM5113 5A, 100V Half-Bridge Gate Driv.
Manufacture etcTI
Datasheet
Download LM5113 Datasheet



LM5113
LM5113
www.ti.com
SNVS725F – JUNE 2011 – REVISED APRIL 2013
LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs
Check for Samples: LM5113
FEATURES
1
2 Independent High-Side and Low-Side TTL
Logic Inputs
• 1.2A/5A Peak Source/Sink Current
• High-Side Floating Bias Voltage Rail Operates
up to 100VDC
• Internal Bootstrap Supply Voltage Clamping
• Split Outputs for Adjustable Turn-on/Turn-off
Strength
• 0.6/2.1Pull-down/Pull-up Resistance
• Fast Propagation Times (28ns Typical)
• Excellent Propagation Delay Matching (1.5ns
Typical)
• Supply Rail Under-Voltage Lockout
• Low Power Consumption
TYPICAL APPLICATIONS
• Current Fed Push-Pull converters
• Half and Full-Bridge converters
• Synchronous Buck converters
• Two-switch Forward converters
• Forward with Active Clamp converters
DESCRIPTION
The LM5113 is designed to drive both the high-side
and the low-side enhancement mode Gallium Nitride
(GaN) FETs in a synchronous buck or a half bridge
configuration. The floating high-side driver is capable
of driving a high-side enhancement mode GaN FET
operating up to 100V. The high-side bias voltage is
generated using a bootstrap technique and is
internally clamped at 5.2V, which prevents the gate
voltage from exceeding the maximum gate-source
voltage rating of enhancement mode GaN FETs. The
inputs of the LM5113 are TTL logic compatible, and
can withstand input voltages up to 14V regardless of
the VDD voltage. The LM5113 has split gate outputs,
providing flexibility to adjust the turn-on and turn-off
strength independently.
In addition, the strong sink capability of the LM5113
maintains the gate in the low state, preventing
unintended turn-on during switching. The LM5113
can operate up to several MHz. The LM5113 is
available in a standard WSON-10 pin package and a
12-bump DSBGA package. The WSON-10 pin
package contains an exposed pad to aid power
dissipation. The DSBGA package offers a compact
footprint and minimized package inductance.
PACKAGES
• WSON-10 (4 mm x 4 mm)
• DSBGA (2 mm x 2 mm)
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2011–2013, Texas Instruments Incorporated



LM5113
LM5113
SNVS725F – JUNE 2011 – REVISED APRIL 2013
Typical Application
UVLO
& CLAMP
LEVEL
SHIFT
HI
UVLO
LI
HB
HOH
HOL
HS
VDD
LOH
LOL
VSS
Figure 1.
Truth Table
HI
LI
HOH
HOL
LOH
L L Open L Open
L H Open L H
H
L
H
Open
Open
H H H Open H
www.ti.com
LOL
L
Open
L
Open
2 Submit Documentation Feedback
Product Folder Links: LM5113
Copyright © 2011–2013, Texas Instruments Incorporated





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)