N-Channel MOSFET. P1503BLH Datasheet

P1503BLH MOSFET. Datasheet pdf. Equivalent

P1503BLH Datasheet
Recommendation P1503BLH Datasheet
Part P1503BLH
Description N-Channel MOSFET
Feature P1503BLH; P1503BLH N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 15mΩ @VGS = 10V .
Manufacture UNIKC
Datasheet
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UNIKC P1503BLH
P1503BLH
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 15mΩ @VGS = 10V
ID
12A
SOT- 223
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
ID
IDM
12
9.9
40
Avalanche Current
IAS 19
Avalanche Energy
L = 0.1mH
EAS
18
Power Dissipation3
TA = 25 °C
TA = 100 °C
PD
3.9
2.5
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
t 10s
RqJA
32
Junction-to-Ambient2
Steady-State
RqJA
60
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3The Power dissipation is based on RqJA t 10s value.
UNITS
°C / W
REV 1.0
1 2017/2/24



UNIKC P1503BLH
P1503BLH
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
30
1 1.5
3
V
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V , TJ = 125 °C
1
mA
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 11A
VGS = 10V, ID = 11A
VDS = 5V, ID = 11A
17.5 24
12.5 15
20
S
DYNAMIC
Input Capacitance
Ciss
935
Output Capacitance
Coss
VGS = 0V, VDS = 15V, f = 1MHz
147 pF
Reverse Transfer Capacitance
Gate Resistance
Crss
Rg
VGS = 0V, VDS = 0V, f = 1MHz
106
1Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=10V)
Qg(VGS=4.5V
Q)gs
Qgd
td(on)
tr
td(off)
tf
VDS = 15V, ID = 11A
VDS = 15V, ID @ 11A
VGS = 10V, RGS = 6Ω
20
11
nC
3
5
20
11
nS
36
11
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 11A, VGS = 0V
3.5 A
1.1 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 11A, dl/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
15 nS
5 nC
2Independent of operating temperature.
REV 1.0
2 2017/2/24



UNIKC P1503BLH
P1503BLH
N-Channel Enhancement Mode MOSFET
REV 1.0
3 2017/2/24





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