NP-Channel MOSFET. P5003QVG Datasheet

P5003QVG MOSFET. Datasheet pdf. Equivalent

Part P5003QVG
Description N&P-Channel MOSFET
Feature NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P5003QVG SOP-8 Lead-Free PRODUCT.
Manufacture NIKO-SEM
Datasheet
Download P5003QVG Datasheet



P5003QVG
NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor
P5003QVG
SOP-8
Lead-Free
PRODUCT SUMMARY
V(BR)DSS
N-Channel 30
P-Channel -30
RDS(ON)
27.5m
45m
ID
7A
-5A
G : GATE
D : DRAIN
S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C
TC = 70 °C
TC = 25 °C
TC = 70 °C
VDS
VGS
ID
IDM
PD
Tj, Tstg
N-Channel P-Channel UNITS
30 -30 V
±20 ±20 V
7 -5
6 -4 A
20 -20
2
W
1.3
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
TYPICAL
MAXIMUM
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
V(BR)DSS
Gate Threshold Voltage
VGS(th)
Gate-Body Leakage
IGSS
STATIC
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
VDS = 0V, VGS = ±20V
VDS = 0V, VGS = ±20V
LIMITS
UNIT
MIN TYP MAX
N-Ch 30
P-Ch -30
N-Ch 1
P-Ch -1
N-Ch
P-Ch
1.5 2.5
-1.5 -2.5
V
±100
nA
±100
1 DEC-19-2005



P5003QVG
NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor
P5003QVG
SOP-8
Lead-Free
Zero Gate Voltage Drain Current
On-State Drain Current1
Drain-Source
Resistance1
On-State
Forward Transconductance1
IDSS
ID(ON)
RDS(ON)
gfs
VDS = 24V, VGS = 0V
N-Ch
VDS = -24V, VGS = 0V
P-Ch
VDS = 20V, VGS = 0V, TJ = 55 °C N-Ch
VDS = -20V, VGS = 0V, TJ = 55 °C P-Ch
VDS = 5V, VGS = 10V
N-Ch
VDS =-5V, VGS = -10V
P-Ch
20
-20
VGS = 4.5V, ID = 6A
N-Ch
VGS = -4.5V, ID = -4A
P-Ch
VGS = 10V, ID = 7A
VGS = -10V, ID = -5A
VDS = 5V, ID = 7A
VDS = -5V, ID = -5A
N-Ch
P-Ch
N-Ch
P-Ch
1
-1
10
-10
30 40
62 80
20.5 27.5
37.5 45
16
13
µA
A
m
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
DYNAMIC
N-Ch
Ciss
N-Channel
P-Ch
VGS = 0V, VDS = 15V, f = 1MHz N-Ch
Coss
P-Channel
P-Ch
VGS = 0V, VDS = -15V, f = 1MHz N-Ch
Crss
P-Ch
Qg
N-Channel
N-Ch
VDS = 0.5*V(BR)DSS, VGS = 10V, P-Ch
ID = 7A
N-Ch
Qgs
P-Channel
P-Ch
VDS = 0.5*V(BR)DSS, VGS = -10V, N-Ch
Qgd
ID = -5A
P-Ch
td(on)
N-Channel
N-Ch
P-Ch
VDD = 10V
N-Ch
tr ID 1A, VGS = 10V, RGEN = 3 P-Ch
N-Ch
td(off)
P-Channel
P-Ch
VDD = -10V
N-Ch
tf ID -1A, VGS = -10V, RGEN = 3 P-Ch
680
780
105
145
75
79
14
15.1
1.9
2.1
3.3
4.0
4.6 7
7.7 11.5
46
5.7 8.5
20 30
20 30
58
9.5 14
pF
nC
nS
2 DEC-19-2005





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