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PNP Transistor. PZT751 Datasheet |
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PZT751
PNP Silicon Planar
Epitaxial Transistor
This PNP Silicon Epitaxial transistor is designed for use in
industrial and consumer applications. The device is housed in the
SOT−223 package which is designed for medium power surface
mount applications.
Features
• High Current
• The SOT−223 Package can be soldered using wave or reflow.
• SOT−223 Package Ensures Level Mounting, Resulting in
Improved Thermal Conduction, and Allows Visual Inspection of
Soldered Joints. The Formed Leads Absorb Thermal Stress During
Soldering, Eliminating the Possibility of Damage to the Die
• NPN Complement is PZT651T1G
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Total Power Dissipation
@ TA = 25°C (Note 1)
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
−60 Vdc
−80 Vdc
−5.0 Vdc
−2.0 Adc
W
0.8 mW/°C
6.4
Storage Temperature Range
Tstg − 65 to 150
°C
Junction Temperature
TJ 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Device mounted on a FR−4 glass epoxy printed circuit board using minimum
recommended footprint.
THERMAL CHARACTERISTICS
Rating
Symbol Value
Unit
Thermal Resistance from Junction−to−
RqJA
156
°C/W
Ambient in Free Air
Maximum Temperature for Soldering TL 260 °C
Purposes
Time in Solder Bath
10 Sec
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
www.onsemi.com
SOT−223 PACKAGE HIGH CURRENT
NPN SILICON TRANSISTOR
SURFACE MOUNT
4
123
SOT−223
CASE 318E
STYLE 1
COLLECTOR 2, 4
BASE
1
EMITTER 3
MARKING DIAGRAM
AYW
ZT751G
G
1
A = Assembly Location
Y = Year
W = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
PZT751T1G
SPZT751T1G
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
1,000 / Tape & Reel
1,000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 9
1
Publication Order Number:
PZT751T1/D
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PZT751
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
Collector−Emitter Breakdown Voltage
(IC = −100 mAdc, IE = 0)
Emitter−Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
Base−Emitter Cutoff Current
(VEB = −4.0 Vdc)
Collector−Base Cutoff Current
(VCB = −80 Vdc, IE = 0)
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = −50 mAdc, VCE = −2.0 Vdc)
(IC = −500 mAdc, VCE = −2.0 Vdc)
(IC = −1.0 Adc, VCE = −2.0 Vdc)
(IC = −2.0 Adc, VCE = −2.0 Vdc)
Collector−Emitter Saturation Voltages
(IC = −2.0 Adc, IB = −200 mAdc)
(IC = −1.0 Adc, IB = −100 mAdc)
Base−Emitter Voltages
(IC = −1.0 Adc, VCE = −2.0 Vdc)
Base−Emitter Saturation Voltage
(IC = −1.0 Adc, IB = −100 mAdc)
Current−Gain−Bandwidth
(IC = −50 mAdc, VCE = −5.0 Vdc, f = 100 MHz)
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%.
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
IEBO
ICBO
hFE
VCE(sat)
VBE(on)
VBE(sat)
fT
Min
−60
−80
−5.0
−
−
75
75
75
40
−
−
−
−
75
Max
−
−
−
−0.1
−100
−
−
−
−
−0.5
−0.3
−1.0
−1.2
−
Unit
Vdc
Vdc
Vdc
mAdc
nAdc
−
Vdc
Vdc
Vdc
MHz
www.onsemi.com
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