NPN Transistor. TIP35E Datasheet

TIP35E Transistor. Datasheet pdf. Equivalent

Part TIP35E
Description Silicon NPN Transistor
Feature TIP35E Silicon NPN Transistor General Purpose Amp, Switch TO−247 Type Package Features: D Collector.
Manufacture NTE
Datasheet
Download TIP35E Datasheet



TIP35E
TIP35E
Silicon NPN Transistor
General Purpose Amp, Switch
TO−247 Type Package
Features:
D Collector−Emitter Sustaining Voltage: VCE(sus) = 140V Min
D Current Gain Bandwidth Product: fT = 3MHz Min @ IC = 1A
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
ContinuCoounstinCuuorruesnt.,.I.C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Power
DDeisrsaitpeaAtiobnov(eTC+2=5+C25..C.).,
.P.D.
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. . 125W
1.0W/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65to +150C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector−Emitter Breakdown Voltage
Collector Cutoff Current
Emitter−Base Cutoff Current
ON Characteristics (Note 1)
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter ON Voltage
V(BR)CEO
ICEO
ICES
IEBO
IC = 30mA, IB = 0, Note 1
VCE = 90V, IB = 0
VCE = 180V, VBE = 0
VEB = 5V, IC = 0
hFE
VCE(sat)
VBE(on)
VCE = 4V, IC = 1.5A
VCE = 4V, IC = 15A
IC = 15A, IB = 3A
IC = 25A, IB = 6.25A
VCE = 4V, IC = 15A
VCE = 4V, IC = 25A
Note 1. Pulsed: Pulse Duration 300s, Duty Cycle 2%.
Min Typ Max Unit
140 − − V
− − 1.0 mA
− − 0.7 mA
− − 1.0 mA
25 −
−
8−−
− − 2.5 V
− − 5.0 V
− − 2.0 V
− − 4.0 V



TIP35E
Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Dynamic Characteristics
Current Gain Bandwidth Product
Small−Signal Current Gain
Switching Characteristics
fT VCE = 10V, IC = 1A, f = 1MHz
hfe VCE = 4V, IC = 1A, f = 1kHz
3−
12 −
− MHz
−
Turn On Time
Turn Off Time
ton IC = 15A, IB1 = −IB2 = 1.5A,
toff VBE(off) = 4.15V, RL = 2
− − 1.2 s
− − 0.9 s
Note 1. Pulsed: Pulse Duration 300s, Duty Cycle 2%.
Note 2. fT = |hfe| · fTEST
.217
(5.5)
.626 (15.9)
Max
.143 (3.65)
Dia Max
BCE
.197 (5.0)
.787
(20.0)
.157
(4.0)
.559
(14.2)
Min
.215 (5.45)
.047 (1.2)
.094 (2.4)


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