NPN Transistor. TIP35E Datasheet

TIP35E Transistor. Datasheet pdf. Equivalent

Part TIP35E
Description Silicon NPN Transistor
Feature TIP35E Silicon NPN Transistor General Purpose Amp, Switch TO−247 Type Package Features: D Collector.
Manufacture NTE
Datasheet
Download TIP35E Datasheet



TIP35E
TIP35E
Silicon NPN Transistor
General Purpose Amp, Switch
TO247 Type Package
Features:
D CollectorEmitter Sustaining Voltage: VCE(sus) = 140V Min
D Current Gain Bandwidth Product: fT = 3MHz Min @ IC = 1A
Absolute Maximum Ratings:
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V
CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V
EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
ContinuCoounstinCuuorruesnt.,.I.C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Power
DDeisrsaitpeaAtiobnov(eTC+2=5+C25..C.).,
.P.D.
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. . 125W
1.0W/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65to +150C
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
CollectorEmitter Breakdown Voltage
Collector Cutoff Current
EmitterBase Cutoff Current
ON Characteristics (Note 1)
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter ON Voltage
V(BR)CEO
ICEO
ICES
IEBO
IC = 30mA, IB = 0, Note 1
VCE = 90V, IB = 0
VCE = 180V, VBE = 0
VEB = 5V, IC = 0
hFE
VCE(sat)
VBE(on)
VCE = 4V, IC = 1.5A
VCE = 4V, IC = 15A
IC = 15A, IB = 3A
IC = 25A, IB = 6.25A
VCE = 4V, IC = 15A
VCE = 4V, IC = 25A
Note 1. Pulsed: Pulse Duration 300s, Duty Cycle 2%.
Min Typ Max Unit
140 − − V
− − 1.0 mA
− − 0.7 mA
− − 1.0 mA
25
8−−
− − 2.5 V
− − 5.0 V
− − 2.0 V
− − 4.0 V



TIP35E
Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Dynamic Characteristics
Current Gain Bandwidth Product
SmallSignal Current Gain
Switching Characteristics
fT VCE = 10V, IC = 1A, f = 1MHz
hfe VCE = 4V, IC = 1A, f = 1kHz
3
12
MHz
Turn On Time
Turn Off Time
ton IC = 15A, IB1 = IB2 = 1.5A,
toff VBE(off) = 4.15V, RL = 2
− − 1.2 s
− − 0.9 s
Note 1. Pulsed: Pulse Duration 300s, Duty Cycle 2%.
Note 2. fT = |hfe| · fTEST
.217
(5.5)
.626 (15.9)
Max
.143 (3.65)
Dia Max
BCE
.197 (5.0)
.787
(20.0)
.157
(4.0)
.559
(14.2)
Min
.215 (5.45)
.047 (1.2)
.094 (2.4)





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