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N-Channel MOSFET. SSD61N60SG Datasheet

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N-Channel MOSFET. SSD61N60SG Datasheet






SSD61N60SG MOSFET. Datasheet pdf. Equivalent




SSD61N60SG MOSFET. Datasheet pdf. Equivalent





Part

SSD61N60SG

Description

N-Channel MOSFET



Feature


Elektronische Bauelemente SSD61 60SG 61 A, 60V, RDS(O ) 9mΩ -Ch Enhancement M ode Power MOSFET RoHS Compliant Produc t A suffix of “-C” specifies haloge n free DESCRIPTION The SSD61N60SG is th e highest performance trench N-ch MOSFE Ts with extreme high cell density , whi ch provide excellent RDS(ON) and gate c harge for most of the synchronous buck converter applications. .
Manufacture

SeCoS

Datasheet
Download SSD61N60SG Datasheet


SeCoS SSD61N60SG

SSD61N60SG; The SSD61N60SG meet the RoHS and Green P roduct with Function reliability approv ed. TO-252(D-Pack) FEATURES RDS(on) 9mΩ @VGS=10V RDS(on)≦13mΩ @VGS=4 .5V High speed power switching, Logic L evel Enhanced Body diode dv/dt capabili ty Enhanced Avalanche Ruggedness 100% U IS Tested, 100% Rg Tested TO-252 Packag e MARKING 61N60SG Date Code PACKAGE INFORMATION Package MPQ .


SeCoS SSD61N60SG

TO-252 2.5K Leader Size 13 inch A BC D GE 1 Gate 2 Drain 3 Source K HF MJ N O P REF. Millimeter Min. Max. REF. Millimeter Min. Max. A 6.35 6.9 J 2.3 REF. B 4.95 5.53 K 0.89 REF. C 2.1 2.5 M 0.45 1.14 D 0.41 0.9 N 1.5 5 Typ. E6 7.5 O 0 0.13 F 2.90 REF P 0.58 REF. G 5.4 6.4 H 0.6 1.2 ABSOLU TE MAXIMUM RATINGS (TJ=25°C unless oth erwise specified) .


SeCoS SSD61N60SG

Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continu ous Drain Current (Silicon Limited) TC =25°C TC=100°C ID Continuous Drain Current (Package Limited) TC=25°C Pul sed Drain Current IDM Avalanche Energ y, Single Pulse, @L=0.4mH TC=25°C EAS Power Dissipation TC=25°C PD Oper ating Junction and Storage Temperature Range TJ, TSTG Therma.

Part

SSD61N60SG

Description

N-Channel MOSFET



Feature


Elektronische Bauelemente SSD61 60SG 61 A, 60V, RDS(O ) 9mΩ -Ch Enhancement M ode Power MOSFET RoHS Compliant Produc t A suffix of “-C” specifies haloge n free DESCRIPTION The SSD61N60SG is th e highest performance trench N-ch MOSFE Ts with extreme high cell density , whi ch provide excellent RDS(ON) and gate c harge for most of the synchronous buck converter applications. .
Manufacture

SeCoS

Datasheet
Download SSD61N60SG Datasheet




 SSD61N60SG
Elektronische Bauelemente
SSD61 60SG
61A, 60V, RDS(O ) 9mΩ
-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SSD61N60SG is the highest performance trench
N-ch MOSFETs with extreme high cell density , which
provide excellent RDS(ON) and gate charge for most of the
synchronous buck converter applications.
The SSD61N60SG meet the RoHS and Green Product with
Function reliability approved.
TO-252(D-Pack)
FEATURES
RDS(on)9mΩ @VGS=10V
RDS(on)13mΩ @VGS=4.5V
High speed power switching, Logic Level
Enhanced Body diode dv/dt capability
Enhanced Avalanche Ruggedness
100% UIS Tested, 100% Rg Tested
TO-252 Package
MARKING
61N60SG
Date Code
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
Leader Size
13 inch
A
BC
D
GE
1
Gate
2
Drain
3
Source
K HF
MJ
N
O
P
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 6.35 6.9 J
2.3 REF.
B 4.95 5.53 K 0.89 REF.
C 2.1 2.5 M 0.45 1.14
D 0.41 0.9 N
1.55 Typ.
E6
7.5 O 0 0.13
F 2.90 REF P 0.58 REF.
G 5.4 6.4
H 0.6 1.2
ABSOLUTE MAXIMUM RATINGS (TJ=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (Silicon Limited)
TC=25°C
TC=100°C
ID
Continuous Drain Current (Package Limited) TC=25°C
Pulsed Drain Current
IDM
Avalanche Energy, Single Pulse, @L=0.4mH TC=25°C
EAS
Power Dissipation
TC=25°C
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Maximum Thermal Resistance Junction-Ambient
RθJA
Maximum Thermal Resistance Junction-Case
RθJC
Ratings
60
±20
61
43
40
270
20
75
-55 ~ 175
65
2
Unit
V
V
A
A
mJ
W
°C
°C / W
http://www.SeCoSGmbH.com/
03-Aug-2017 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4




 SSD61N60SG
Elektronische Bauelemente
SSD61 60SG
61A, 60V, RDS(O ) 9mΩ
-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max.
Drain-Source Breakdown Voltage
BVDSS
60 -
-
Gate Threshold Voltage
VGS(th)
1 1.8 2.4
Forward Transfer conductance
gfs - 26 -
Gate-Source Leakage Current
IGSS - - ±100
TJ=25°C
Drain-Source Leakage Current
TJ=100°C
IDSS
- -1
- - 100
Static Drain-Source On-Resistance
RDS(ON)
- 7.3 9
- 10 13
Total Gate Charge
Qg - 24 -
Total Gate Charge
Qg - 12 -
Gate-Source Charge
Qgs - 5 -
Gate-Drain (“Miller”) Change
Qgd - 3 -
Turn-on Delay Time
Td(on)
-9-
Rise Time
Tr - 4 -
Turn-off Delay Time
Td(off)
- 29 -
Fall Time
Tf - 4 -
Input Capacitance
Ciss - 1620 -
Output Capacitance
Coss
- 415 -
Reverse Transfer Capacitance
Crss
-3
Source-Drain Diode
-
Forward On Voltage
VSD - 0.9 1.2
Reverse Recovery Time
Trr - 30 -
Reverse Recovery Charge
Qrr - 43 -
Unit
Test conditions
V VGS=0, ID=250µA
V VDS=VGS, ID=250µA
S VDS=5V, ID=20A
nA VGS=±20V
VDS=60V, VGS=0
µA
VDS=60V, VGS=0
mΩ VGS=10V, ID=20A
mΩ VGS=4.5V, ID=20A
VGS=10V
VGS=4.5V
nC
ID=20A
VDD=30V
VGS=10V
VDD=30V
nS
ID=20A
VGS=10V
RG=10Ω
VGS=0
pF VDS=30V
f=1.0MHz
V IF=20A, VGS=0
nS
VR=30V, IF=20A, dl/dt=300A/µs
nC
http://www.SeCoSGmbH.com/
03-Aug-2017 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4




 SSD61N60SG
Elektronische Bauelemente
TYPICAL CHARACTERISTICS CURVE
SSD61 60SG
61A, 60V, RDS(O ) 9mΩ
-Ch Enhancement Mode Power MOSFET
http://www.SeCoSGmbH.com/
03-Aug-2017 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 4



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