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N-Channel MOSFET. SSG04N15B-C Datasheet

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N-Channel MOSFET. SSG04N15B-C Datasheet






SSG04N15B-C MOSFET. Datasheet pdf. Equivalent




SSG04N15B-C MOSFET. Datasheet pdf. Equivalent





Part

SSG04N15B-C

Description

N-Channel MOSFET



Feature


Elektronische Bauelemente SSG04 15B-C 4 .2A, 150V, RDS(O ) 90mΩ -Ch Enhanceme nt Mode Power MOSFET RoHS Compliant Pr oduct A suffix of “-C” specifies ha logen free DESCRIPTION The SSG04N15B-C is the highest performance trench N-Ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and g ate charge for most of the synchronous buck converter applicati.
Manufacture

SeCoS

Datasheet
Download SSG04N15B-C Datasheet


SeCoS SSG04N15B-C

SSG04N15B-C; ons. The SSG04N15B-C meet the RoHS and G reen Product requirement with full func tion reliability approved. FEATURES Ad vanced High Cell Density Trench Technol ogy Super Low Gate Charge Green Device Available MARKING 04N15B = Date Code PACKAGE INFORMATION Package MPQ SOP -8 2.5K Leader Size 13 inch SOP-8 B LD M A HG C JK F N E REF. A B C D E F G Millimeter .


SeCoS SSG04N15B-C

Min. Max. 5.79 6.20 4.70 5.11 3.80 4.00 0° 8° 0.40 1.27 0.10 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.33 0.51 0.375 REF. 45°REF. 1.3 1.752 0 0.25 0.25 REF. ORDER INFORMATION P art Number Type SSG04N15B-C Lead (Pb) -free and Halogen-free ABSOLUTE MAXIMU M RATINGS Parameter Symbol Drain-Sour ce Voltage VDS Gate-Source Voltage V GS Continuous Drain .


SeCoS SSG04N15B-C

Current 1, @ VGS=10V Pulsed Drain Curren t 2 Total Power Dissipation 3 TA=25°C TA=70°C TA=25°C ID IDM PD Operatin g Junction and Storage Temperature Rang e TJ, TSTG Thermal Resistance Ratings Thermal Resistance Junction-Ambient 1 RθJA Thermal Resistance Junction-Ca se 1 RθJC Ratings 150 ±20 4.2 3 20 3.1 -55~150 t≦10s, 40 Steady State, 7 5 24 Unit V V A A W °C °C.

Part

SSG04N15B-C

Description

N-Channel MOSFET



Feature


Elektronische Bauelemente SSG04 15B-C 4 .2A, 150V, RDS(O ) 90mΩ -Ch Enhanceme nt Mode Power MOSFET RoHS Compliant Pr oduct A suffix of “-C” specifies ha logen free DESCRIPTION The SSG04N15B-C is the highest performance trench N-Ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and g ate charge for most of the synchronous buck converter applicati.
Manufacture

SeCoS

Datasheet
Download SSG04N15B-C Datasheet




 SSG04N15B-C
Elektronische Bauelemente
SSG04 15B-C
4.2A, 150V, RDS(O ) 90mΩ
-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SSG04N15B-C is the highest performance trench
N-Ch MOSFETs with extreme high cell density, which
provide excellent RDS(ON) and gate charge for most of
the synchronous buck converter applications.
The SSG04N15B-C meet the RoHS and Green Product
requirement with full function reliability approved.
FEATURES
Advanced High Cell Density Trench Technology
Super Low Gate Charge
Green Device Available
MARKING
04N15B
= Date Code
PACKAGE INFORMATION
Package
MPQ
SOP-8
2.5K
Leader Size
13 inch
SOP-8
B
LD
M
A
HG
C
JK
F
N
E
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.79 6.20
4.70 5.11
3.80 4.00
0° 8°
0.40 1.27
0.10 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.33 0.51
0.375 REF.
45°REF.
1.3 1.752
0 0.25
0.25 REF.
ORDER INFORMATION
Part Number
Type
SSG04N15B-C Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current 1, @ VGS=10V
Pulsed Drain Current 2
Total Power Dissipation 3
TA=25°C
TA=70°C
TA=25°C
ID
IDM
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Thermal Resistance Junction-Ambient 1
RθJA
Thermal Resistance Junction-Case 1
RθJC
Ratings
150
±20
4.2
3
20
3.1
-55~150
t10s, 40
Steady State, 75
24
Unit
V
V
A
A
W
°C
°C/W
http://www.SeCoSGmbH.com/
21-Feb-2020 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4




 SSG04N15B-C
Elektronische Bauelemente
SSG04 15B-C
4.2A, 150V, RDS(O ) 90mΩ
-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Drain-Source Breakdown Voltage
BVDSS
150
-
-
Gate Threshold Voltage
Gate-Source Leakage Current
VGS(th)
IGSS
1.2
-
- 2.5
- ±100
TJ=25°C
- -1
Drain-Source Leakage Current
IDSS
TJ=55°C
- -5
Static Drain-Source On-Resistance 2
RDS(ON)
-
-
- 90
- 110
Total Gate Charge
Gate-Source Charge
Qg - 25.1 -
Qgs - 6.8 -
Gate-Drain Change
Turn-on Delay Time
Rise Time
Qgd - 12.6 -
Td(on)
-
13
-
Tr - 8.2 -
Turn-off Delay Time
Fall Time
Td(off)
-
25
-
Tf - 11 -
Input Capacitance
Ciss - 2285 -
Output Capacitance
Coss - 110 -
Reverse Transfer Capacitance
Continuous Source Current 1
Pulsed Source Current 2
Diode Forward Voltage 2
Crss
-
83
Source-Drain Diode
IS -
ISM -
VSD -
-
-
-
-
20
40
1.2
Reverse Recovery Time
trr - 37
Reverse Recovery Charge
Qrr -
Notes:
1. Surface Mounted on 1inch2 FR4 Board with 2OZ copper.
2. The data tested by pulsed, Pulse Width 300µs, Duty Cycle 2%.
3. The power dissipation is limited by 150°C, junction temperature.
263
-
-
Unit
V
V
nA
µA
mΩ
Test Conditions
VGS=0, ID=250µA
VDS=VGS, ID=250µA
VGS= ±20V
VDS=120V, VGS=0
VDS=120V, VGS=0
VGS=10V, ID=4A
VGS=4.5V, ID=2A
ID=4A
nC VDS=75V
VGS=4.5V
VDD=75V
nS
ID=4A
VGS=10V
RG=3.3Ω
VGS=0
pF VDS=25V
f=1MHz
A
V VGS=0, IS=1A, TJ=25°C
nS IF=4A, dl/dt=100A/µs
nC TJ=25°C
http://www.SeCoSGmbH.com/
21-Feb-2020 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4




 SSG04N15B-C
Elektronische Bauelemente
TYPICAL CHARACTERISTICS CURVE
SSG04 15B-C
4.2A, 150V, RDS(O ) 90mΩ
-Ch Enhancement Mode Power MOSFET
http://www.SeCoSGmbH.com/
21-Feb-2020 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 4



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