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N-Channel MOSFET. SSG30N04S-C Datasheet

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N-Channel MOSFET. SSG30N04S-C Datasheet






SSG30N04S-C MOSFET. Datasheet pdf. Equivalent




SSG30N04S-C MOSFET. Datasheet pdf. Equivalent





Part

SSG30N04S-C

Description

N-Channel MOSFET



Feature


Elektronische Bauelemente SSG30N04S-C 3 0A, 40V, RDS(ON) 2.6mΩ N-Ch Enhanceme nt Mode Power MOSFET RoHS Compliant Pr oduct A suffix of “-C” specifies ha logen & lead-free DESCRIPTION The SSG30 N04S-C is the highest performance trenc h N-Ch MOSFETs with extreme high cell d ensity, which provide excellent RDS(ON) and gate charge for most of the synchr onous buck converter app.
Manufacture

SeCoS

Datasheet
Download SSG30N04S-C Datasheet


SeCoS SSG30N04S-C

SSG30N04S-C; lications. The SSG30N04S-C meet the RoHS and Green Product requirement with ful l function reliability approved. FEATU RES High Speed Power Switching Super Lo w Gate Charge Green Device Available M ARKING CODE 30N04S Date Code PACKAGE INFORMATION Package MPQ SOP-8 2.5K Leader Size 13’ inch ORDER INFORMA TION Part Number Type SSG30N04S-C Lea d (Pb)-free and Halo.


SeCoS SSG30N04S-C

gen-free SOP-8 B LD M A HG C JK F N E REF. A B C D E F G Millimeter Min. Max. 5.79 6.20 4.70 5.11 3.80 4.00 0° 8° 0.40 1.27 0.10 0.25 1.27 TYP. REF . H J K L M N Millimeter Min. Max. 0.3 3 0.51 0.375 REF. 45°REF. 1.3 1.752 0 0.25 0.25 REF. SD SD SD GD ABSOLUTE M AXIMUM RATINGS (TA=25°C unless otherwi se specified) Parameter Symbol Drain -Source Voltage VDS .


SeCoS SSG30N04S-C

Gate-Source Voltage VGS Continuous Dra in Current 1 @VGS=10V Pulsed Drain Curr ent 2 Power Dissipation 3 TA=25°C TA= 70°C TA=25°C ID IDM PD Operating Ju nction & Storage Temperature Range TJ, TSTG Thermal Resistance Ratings Ther mal Resistance Junction-ambient 1 t≦ 10s Steady State RθJA Thermal Resist ance Junction-Case 1 RθJC Ratings 40 ±20 30 25 80 3.1 -55~150.

Part

SSG30N04S-C

Description

N-Channel MOSFET



Feature


Elektronische Bauelemente SSG30N04S-C 3 0A, 40V, RDS(ON) 2.6mΩ N-Ch Enhanceme nt Mode Power MOSFET RoHS Compliant Pr oduct A suffix of “-C” specifies ha logen & lead-free DESCRIPTION The SSG30 N04S-C is the highest performance trenc h N-Ch MOSFETs with extreme high cell d ensity, which provide excellent RDS(ON) and gate charge for most of the synchr onous buck converter app.
Manufacture

SeCoS

Datasheet
Download SSG30N04S-C Datasheet




 SSG30N04S-C
Elektronische Bauelemente
SSG30N04S-C
30A, 40V, RDS(ON) 2.6m
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG30N04S-C is the highest performance trench
N-Ch MOSFETs with extreme high cell density, which
provide excellent RDS(ON) and gate charge for most of the
synchronous buck converter applications.
The SSG30N04S-C meet the RoHS and Green Product
requirement with full function reliability approved.
FEATURES
High Speed Power Switching
Super Low Gate Charge
Green Device Available
MARKING CODE
30N04S
Date Code
PACKAGE INFORMATION
Package
MPQ
SOP-8
2.5K
Leader Size
13’ inch
ORDER INFORMATION
Part Number
Type
SSG30N04S-C Lead (Pb)-free and Halogen-free
SOP-8
B
LD
M
A
HG
C
JK
F
N
E
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.79 6.20
4.70 5.11
3.80 4.00
0° 8°
0.40 1.27
0.10 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.33 0.51
0.375 REF.
45°REF.
1.3 1.752
0 0.25
0.25 REF.
SD
SD
SD
GD
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current 1 @VGS=10V
Pulsed Drain Current 2
Power Dissipation 3
TA=25°C
TA=70°C
TA=25°C
ID
IDM
PD
Operating Junction & Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Thermal Resistance Junction-ambient 1
t10s
Steady State
RθJA
Thermal Resistance Junction-Case 1
RθJC
Ratings
40
±20
30
25
80
3.1
-55~150
40
75
24
Unit
V
V
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
11-Feb-2020 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 4




 SSG30N04S-C
Elektronische Bauelemente
SSG30N04S-C
30A, 40V, RDS(ON) 2.6m
N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max.
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
BVDSS
40
-
-
VGS(th)
1
- 2.5
Forward Transfer conductance
Gate-Source Leakage Current
gfs - 53 -
IGSS - - ±100
Drain-Source Leakage Curren
- -1
IDSS
- -5
Static Drain-Source On-Resistance 2
RDS(ON)
-
-
1.8 2.6
2.6 3.2
Total Gate Charge(4.5V)
Qg - 45 -
Total Gate Charge
Qg - 88 -
Gate-Source Charge
Qgs - 12 -
Gate-Drain (“Miller”) Charge
Turn-On Delay Time
Qgd
Td(on)
- 18.5 -
- 18.5 -
Rise Time
Tr - 9 -
Turn-Off Delay Time
Td(off)
- 58.5 -
Fall Time
Input Capacitance
Tf - 32 -
Ciss - 3972 -
Output Capacitance
Reverse Transfer Capacitance
Coss
- 896
Crss - 62
Source-Drain Diode
-
-
Diode Forward Voltage 2
VSD - -
Continuous Source Current 1
IS - -
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width 300us, duty cycle 2%.
3. The power dissipation is limited by 150°C junction temperature.
1.2
30
Unit
V
V
S
nA
µA
m
Test condition
VGS=0V, ID=250µA
VDS=VGS, ID=250µA
VDS=5V, ID=20A
VGS=±20V
VDS=32V,VGS=0V, TJ=25°C
VDS=32V,VGS=0V, TJ=55°C
VGS=10V, ID=15A
VGS=4.5V, ID=15A
ID=15A
nC VDS=15V
VGS=10V
VDD=15V
nS ID=15A
VGS=10V
RG=3.3
VGS=0V
pF VDS=25V
f=1MHz
V IS=1A, VGS=0V
A VG=VD=0V, Force Current
http://www.SeCoSGmbH.com/
11-Feb-2020 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 4




 SSG30N04S-C
Elektronische Bauelemente
CHARACTERISTICS CURVE
SSG30N04S-C
30A, 40V, RDS(ON) 2.6m
N-Ch Enhancement Mode Power MOSFET
http://www.SeCoSGmbH.com/
11-Feb-2020 Rev. B
Any changes of specification will not be informed individually.
Page 3 of 4



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