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N-Channel MOSFET. SSQ07N60J Datasheet

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N-Channel MOSFET. SSQ07N60J Datasheet






SSQ07N60J MOSFET. Datasheet pdf. Equivalent






SSQ07N60J MOSFET. Datasheet pdf. Equivalent


SSQ07N60J

Part

SSQ07N60J

Description

N-Channel MOSFET



Feature


Elektronische Bauelemente SSQ07N60J 7 A , 600 V, RDS(ON) 1.3 Ω N-Channel Enha ncement Mode Power MOSFET RoHS Complia nt Product A suffix of “-C” specifi es halogen free DESCRIPTION The high vo ltage MOSFET uses an advanced terminati on scheme to provide enhanced voltage-b locking capability without degrading pe rformance over time. In addition, this advanced MOSFET is desig.
Manufacture

SeCoS

Datasheet
Download SSQ07N60J Datasheet


SeCoS SSQ07N60J

SSQ07N60J; ned to withstand high energy in avalanch e and commutation modes. The new energy efficient design also offers a drain-t o-source diode with a fast recovery tim e. Designed for high voltage, high spee d switching applications in power suppl iers, converters and PWM motor controls , these devices are particularly well s uited for bridge circuits where diode s peed and commutati.


SeCoS SSQ07N60J

ng safe operating areas are critical and offer additional and safety margin aga inst unexpected voltage transients. TO -220J FEATURES Robust High Voltage Ter mination Avalanche Energy Specified Sou rce-to-Drain Diode Recovery Time Compar able to a Discrete Fast Recovery Diode Diode is characterized for The Use in B ridging Circuits IDSS and VDS(ON) Speci fied at Elevated T.

Part

SSQ07N60J

Description

N-Channel MOSFET



Feature


Elektronische Bauelemente SSQ07N60J 7 A , 600 V, RDS(ON) 1.3 Ω N-Channel Enha ncement Mode Power MOSFET RoHS Complia nt Product A suffix of “-C” specifi es halogen free DESCRIPTION The high vo ltage MOSFET uses an advanced terminati on scheme to provide enhanced voltage-b locking capability without degrading pe rformance over time. In addition, this advanced MOSFET is desig.
Manufacture

SeCoS

Datasheet
Download SSQ07N60J Datasheet




 SSQ07N60J
Elektronische Bauelemente
SSQ07N60J
7 A, 600 V, RDS(ON) 1.3
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability without
degrading performance over time. In addition, this advanced
MOSFET is designed to withstand high energy in avalanche and
commutation modes. The new energy efficient design also offers
a drain-to-source diode with a fast recovery time. Designed for
high voltage, high speed switching applications in power suppliers,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional and safety
margin against unexpected voltage transients.
TO-220J
FEATURES
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to
a Discrete Fast Recovery Diode
Diode is characterized for The Use in Bridging Circuits
IDSS and VDS(ON) Specified at Elevated Temperature
REF.
A
B
C
D
E
F
G
H
Millimeter
Min. Max.
10.010 10.350
3.735 3.935
2.590 2.890
12.060 12.460
1.170 1.370
0.710 0.910
13.400 13.800
2.540 TYP.
REF.
I
J
K
L
M
N
Q
Millimeter
Min. Max.
4.980 5.180
3.560 3.960
4.470 4.670
1.200 1.400
8.500 8.900
2.520 2.820
0.330 0.650
D
2
1
G
3
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Continuous Drain-Source Diode Forward Current
IDM
Power Dissipation
Single Pulsed Avalanche Energy 1
PD
EAS
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
Thermal Resistance from Junction to Ambient
RθJA
Rating
600
±20
7
20
2
530
150, -55~150
62.5
Unit
V
V
A
A
W
mJ
°C
°C/W
http://www.SeCoSGmbH.com/
6-Nov-2015 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 3




 SSQ07N60J
Elektronische Bauelemente
SSQ07N60J
7 A, 600 V, RDS(ON) 1.3
N-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Parameter
Symbol Min. Typ. Max. Unit
Test condition
Drain-Source Breakdown Voltage
BVDSS
600
-
- V VGS=0, ID=250µA
Drain-Source Leakage Current
- -1
VDS=600V, VGS=0
IDSS
µA
- - 100
VDS=480V, VGS=0, TJ=125°C
Gate-Source Leakage Forward Current
IGSSF
-
- 100 nA VGSF=30V, VDS=0V
Gate-Source Leakage Reverse Current
IGSSR
-
- 100 nA VGSR=30V, VDS=0V
Gate Threshold Voltage
Static Drain-Source On-Resistance 2
Forward Transconductance 2
VGS(th)
RDS(ON)
gfs
2
-
5
- 4 V VDS=VGS, ID=250µA
- 1.3 VGS=10V, ID=3.5A
- - S VDS=50V, ID=3.9A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss - 1380 -
VDS=25V
Coss
- 115 - pF VGS=0
Crss - 23 -
f=1MHz
Turn-on Delay Time 2
Rise Time 2
Turn-off Delay Time 2
Fall Time 2
Td(on)
Tr
Td(off)
Tf
- 30 -
VDD=300V
-
-
80
125
-
-
nS
VGS=10V
RG=9.1
- 85 -
ID=7A
Total Gate Charge 2
Gate-Source Charge 2
Gate-Drain (“Miller”) Change 2
Qg - 38 -
VDS=480V
Qgs - 6.4 - nC VGS=10V
Qgd - 15 -
ID=7A
Internal Drain Inductance @measured
from the drain lead 0.25’’ from the
package to the center of die
LD - 4.5 - nH
Internal Drain Inductance @measured
from the source lead 0.25’’ from the
package to the source bond pad
LS - 7.5 - nH
Source-Drain Diode Characteristics
Drain-Source Diode Forward Voltage 2
Forward Turn-On Time 3
VSD - - 1.4
Ton - - -
Reverse Recovery Time
TRR - 415
Notes:
1. EAS condition: L=19.5mH, IL=7A, VDD=50V, VGS=10V, RG=0, TJ=25°C.
2. Pulse Test : Pulse width300µs, duty cycle2%.
3. The typical parameter of Ton is negligible and is dominated by circuit inductance.
-
V IS=7A, dIS/dI=100A/µS
nS
IS=7A, dIS/dI=100A/µS
nS
http://www.SeCoSGmbH.com/
6-Nov-2015 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 3



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