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Phototransistor. PTP81708T06 Datasheet

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Phototransistor. PTP81708T06 Datasheet






PTP81708T06 Phototransistor. Datasheet pdf. Equivalent




PTP81708T06 Phototransistor. Datasheet pdf. Equivalent





Part

PTP81708T06

Description

Phototransistor



Feature


Features Small double-end package High photo sensitivity High reliability S pectral range of sensitivity: 400-1100n m Fast Response time RoHS compliance Applications Infrared sensor Infrared Touch Panel Solutions PTP81708T06 SMD Type Phototransistor Description The P TP81708T06 is silicon NPN Phototransist or The device has wide spectral sensiti vity range from 40.
Manufacture

CT Micro

Datasheet
Download PTP81708T06 Datasheet


CT Micro PTP81708T06

PTP81708T06; 0 to 1100nm. Package Outline Schematic Emitter Collector CT Micro Propriet ary & Confidential Page 1 Rev 0(Preli minary) Sep, 2017 PTP81708T06 SMD Type Phototransistor Absolute Maximum Rati ng at 250C Symbol Parameters IC Coll ector Current BVCEO Collector-Emitter Voltage BVECO Emitter-Collector Voltag e Topr Operating Temperature Tstg Sto rage Temperature .


CT Micro PTP81708T06

Tsol Soldering Temperature Pto Total Po wer Dissipation Optical Characteristic s Symbol Parameters  Spectral Ban dwidth P Peak Sensitivity θ1/2 Vie w Angle Test Conditions - VCE=5V Elec trical Characteristics Symbol Paramet ers ICEO Dark Current VCE(sat) Colle ctor-Emitter Saturation Voltage IC Col lector Light Current CT Terminal Capac itance Test Conditions.


CT Micro PTP81708T06

Ee=0mW /cm2 VCE=20V Ee=1mW /cm2 IC=0.3m A Ee=1mW /cm2 P=940nm, VCE=5V Ee=0mW /cm2 f=1MHz ,VCE=5V Ratings 20 35 5 - 40 ~ +85 -40 ~ +100 260 150 Units mA V V 0C 0C 0C mW Notes 1 2 3 Min Typ Ma x Units Notes 400 - 1100 nm - 820 - nm - 65 - deg Min Typ Max Units Notes - - 100 nA - - 0.4 V 0.3 0.8 - mA - 2.45 - pF CT Micro Proprietary & Conf idential Page 2 Rev .

Part

PTP81708T06

Description

Phototransistor



Feature


Features Small double-end package High photo sensitivity High reliability S pectral range of sensitivity: 400-1100n m Fast Response time RoHS compliance Applications Infrared sensor Infrared Touch Panel Solutions PTP81708T06 SMD Type Phototransistor Description The P TP81708T06 is silicon NPN Phototransist or The device has wide spectral sensiti vity range from 40.
Manufacture

CT Micro

Datasheet
Download PTP81708T06 Datasheet




 PTP81708T06
Features
Small double-end package
High photo sensitivity
High reliability
Spectral range of sensitivity: 400-1100nm
Fast Response time
RoHS compliance
Applications
Infrared sensor
Infrared Touch Panel Solutions
PTP81708T06
SMD Type Phototransistor
Description
The PTP81708T06 is silicon NPN Phototransistor
The device has wide spectral sensitivity range from
400 to 1100nm.
Package Outline
Schematic
Emitter
Collector
CT Micro
Proprietary & Confidential
Page 1
Rev 0(Preliminary)
Sep, 2017




 PTP81708T06
PTP81708T06
SMD Type Phototransistor
Absolute Maximum Rating at 250C
Symbol
Parameters
IC Collector Current
BVCEO Collector-Emitter Voltage
BVECO Emitter-Collector Voltage
Topr Operating Temperature
Tstg Storage Temperature
Tsol Soldering Temperature
Pto Total Power Dissipation
Optical Characteristics
Symbol
Parameters
Spectral Bandwidth
P Peak Sensitivity
θ1/2 View Angle
Test Conditions
-
-
VCE=5V
Electrical Characteristics
Symbol
Parameters
ICEO Dark Current
VCE(sat)
Collector-Emitter
Saturation Voltage
IC Collector Light Current
CT Terminal Capacitance
Test Conditions
Ee=0mW /cm2
VCE=20V
Ee=1mW /cm2
IC=0.3mA
Ee=1mW /cm2
P=940nm, VCE=5V
Ee=0mW /cm2
f=1MHz ,VCE=5V
Ratings
20
35
5
-40 ~ +85
-40 ~ +100
260
150
Units
mA
V
V
0C
0C
0C
mW
Notes
1
2
3
Min Typ Max Units Notes
400 - 1100 nm
- 820 - nm
- 65 - deg
Min Typ Max Units Notes
- - 100 nA
- - 0.4 V
0.3 0.8 - mA
- 2.45 -
pF
CT Micro
Proprietary & Confidential
Page 2
Rev 0(Preliminary)
Sep, 2017




 PTP81708T06
PTP81708T06
SMD Type Phototransistor
Switching Characteristics
Symbol
Parameters
tr Rise Time
tf Fall Time
ton Turn on Delay Time
toff Turn off Delay Time
Test Conditions
Vce = 5V, RL = 100
IC=1.0mA
Min Typ Max Units Notes
-6-
-7-
µs 4
- 11 -
- 7.9 -
Notes:
1 : Test conditions : IC=100μA, Ee=0mW/cm2.
2 : Test conditions : IE=100μA, Ee=0mW/cm2.
3 : Soldering time5 seconds.
4 : Test circuit:
CT Micro
Proprietary & Confidential
Page 3
Rev 0(Preliminary)
Sep, 2017



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