Phototransistor. PTP81708T06 Datasheet

PTP81708T06 Phototransistor. Datasheet pdf. Equivalent

Part PTP81708T06
Description Phototransistor
Feature Features  Small double-end package  High photo sensitivity  High reliability  Spectral range of .
Manufacture CT Micro
Total Page 10 Pages
Datasheet
Download PTP81708T06 Datasheet



PTP81708T06
Features
Small double-end package
High photo sensitivity
High reliability
Spectral range of sensitivity: 400-1100nm
Fast Response time
RoHS compliance
Applications
Infrared sensor
Infrared Touch Panel Solutions
PTP81708T06
SMD Type Phototransistor
Description
The PTP81708T06 is silicon NPN Phototransistor
The device has wide spectral sensitivity range from
400 to 1100nm.
Package Outline
Schematic
Emitter
Collector
CT Micro
Proprietary & Confidential
Page 1
Rev 0(Preliminary)
Sep, 2017



PTP81708T06
PTP81708T06
SMD Type Phototransistor
Absolute Maximum Rating at 250C
Symbol
Parameters
IC Collector Current
BVCEO Collector-Emitter Voltage
BVECO Emitter-Collector Voltage
Topr Operating Temperature
Tstg Storage Temperature
Tsol Soldering Temperature
Pto Total Power Dissipation
Optical Characteristics
Symbol
Parameters
Spectral Bandwidth
P Peak Sensitivity
θ1/2 View Angle
Test Conditions
-
-
VCE=5V
Electrical Characteristics
Symbol
Parameters
ICEO Dark Current
VCE(sat)
Collector-Emitter
Saturation Voltage
IC Collector Light Current
CT Terminal Capacitance
Test Conditions
Ee=0mW /cm2
VCE=20V
Ee=1mW /cm2
IC=0.3mA
Ee=1mW /cm2
P=940nm, VCE=5V
Ee=0mW /cm2
f=1MHz ,VCE=5V
Ratings
20
35
5
-40 ~ +85
-40 ~ +100
260
150
Units
mA
V
V
0C
0C
0C
mW
Notes
1
2
3
Min Typ Max Units Notes
400 - 1100 nm
- 820 - nm
- 65 - deg
Min Typ Max Units Notes
- - 100 nA
- - 0.4 V
0.3 0.8 - mA
- 2.45 -
pF
CT Micro
Proprietary & Confidential
Page 2
Rev 0(Preliminary)
Sep, 2017





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