Infrared Emitter. HIRC2808Q12-B20 Datasheet

HIRC2808Q12-B20 Emitter. Datasheet pdf. Equivalent

Part HIRC2808Q12-B20
Description Infrared Emitter
Feature HIRC2808Q12-B20 SMD Type 855nm Infrared Emitter Features  Side view package  Viewing Angle = 600.
Manufacture CT Micro
Datasheet
Download HIRC2808Q12-B20 Datasheet



HIRC2808Q12-B20
HIRC2808Q12-B20
SMD Type 855nm Infrared Emitter
Features
Side view package
Viewing Angle = 600
High reliability
Good spectral matching to Si photo detector
RoHS compliance
Applications
Infrared sensor
Description
The HIRC2808Q12-B20 is a GaAlAs infrared LED
housed in a miniature SMD package. The device
has a peak wavelength of 855nm LED spectrally
matched with phototransistor or photodiode.
Package Outline
Schematic
Anode
Cathode
CT Micro
Proprietary & Confidential
Page 1
Rev 0(Preliminary)
Mar, 2014



HIRC2808Q12-B20
HIRC2808Q12-B20
SMD Type 855nm Infrared Emitter
Absolute Maximum Rating at 250C
Symbol
Parameters
IF Continuous Forward Current
IFP Peak Forward Current
VR Reverse Voltage
Topr Operating Temperature
Tstg Storage Temperature
Tsol Soldering Temperature
PD Power Dissipation at(or below) 25Free Air Temperature
Ratings
70
0.7
5
-40 ~ +85
-40 ~ +100
260
140
Units
mA
A
V
0C
0C
0C
mW
Notes
1
2
Electro-Optical Characteristics TA = 25°C (unless otherwise specified)
Optical Characteristics
Symbol
Parameters
Ie Radiant Intensity
λp
Δλ
θ1/2
Peak Wavelength
Spectral Bandwidth
Angle of Half Intensity
Test Conditions
IF=20mA
IF =70mA
IF=20mA
IF=20mA
IF=20mA
Min Typ Max Units Notes
1.5 3.0
- 10
-
mW/sr
-
- 855 - nm
- 30 - nm
- 60 - deg
Electrical Characteristics
Symbol
Parameters
VF Forward Voltage
IR Reverse Current
Test Conditions
IF=20mA
IF=70mA
VR=5V
Notes:
1. IFP Conditions--Pulse Width100μs and Duty1%.
2. Soldering time5 seconds.
Min Typ Max Units Notes
1.30 1.40
1.40 1.60
1.7
2.0
V
- - 10 μA
CT Micro
Proprietary & Confidential
Page 2
Rev 0(Preliminary)
Mar, 2014





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