Infrared Emitter. HIRP3216Q18-C0 Datasheet

HIRP3216Q18-C0 Emitter. Datasheet pdf. Equivalent

Part HIRP3216Q18-C0
Description Infrared Emitter
Feature HIRP3216Q18-C0 SMD Type 850nm Infrared Emitter Features  Small double-end package  Viewing Angle .
Manufacture CT Micro
Datasheet
Download HIRP3216Q18-C0 Datasheet



HIRP3216Q18-C0
HIRP3216Q18-C0
SMD Type 850nm Infrared Emitter
Features
Small double-end package
Viewing Angle = 100
High radiant intensity
High reliability
Good spectral matching to Si photo detector
RoHS compliance
Applications
Infrared sensor
Description
The HIRP3216Q18-C0 is a GaAlAs infrared LED
housed in a miniature SMD package. The device
has a peak wavelength of 850nm LED spectrally
matched with phototransistor or photodiode.
Package Outline
Schematic
Cathode
Anode
CT Micro
Proprietary & Confidential
Page 1
Rev 0 (Preliminary)
Jun, 2018



HIRP3216Q18-C0
HIRP3216Q18-C0
SMD Type 850nm Infrared Emitter
Absolute Maximum Rating at 250C
Symbol
Parameters
IF Continuous Forward Current
IFP Peak Forward Current
VR Reverse Voltage
Topr Operating Temperature
Tstg Storage Temperature
Tsol Soldering Temperature
PD Power Dissipation at(or below) 25Free Air Temperature
RTHJA Junction to Ambient Thermal Resistance
Ratings
70
0.7
5
-40 ~ +85
-40 ~ +100
260
140
540
Units
mA
A
V
0C
0C
0C
mW
0C/W
Notes
1
2
Electro-Optical Characteristics TA = 25°C (unless otherwise specified)
Optical Characteristics
Symbol
Parameters
Ie Radiant Intensity
λp
Δλ
θ1/2
Peak Wavelength
Spectral Bandwidth
Angle of Half Intensity
Test Conditions
IF=20mA
IF =70mA
IF=20mA
IF=20mA
IF=20mA
Min Typ Max Units Notes
12.5 20
- 65
--
mW/sr
-
830 850 870 nm
- 30 - nm
- 10 - deg
Electrical Characteristics
Symbol
Parameters
VF Forward Voltage
IR Reverse Current
Test Conditions
IF=20mA
IF=70mA
VR=5V
Notes:
1 : IFP Conditions--Pulse Width100μs and Duty1%.
2 : Soldering time5 seconds.
Min Typ Max Units Notes
1.30 1.40
1.40 1.56
--
1.7
2.0
10
V
μA
CT Micro
Proprietary & Confidential
Page 2
Rev 0 (Preliminary)
Jun, 2018





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