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Infrared Emitter. HIRP3216Q18-C0 Datasheet

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Infrared Emitter. HIRP3216Q18-C0 Datasheet






HIRP3216Q18-C0 Emitter. Datasheet pdf. Equivalent




HIRP3216Q18-C0 Emitter. Datasheet pdf. Equivalent





Part

HIRP3216Q18-C0

Description

Infrared Emitter



Feature


HIRP3216Q18-C0 SMD Type 850nm Infrared E mitter Features Small double-end pack age Viewing Angle = 100 High radia nt intensity High reliability Good sp ectral matching to Si photo detector R oHS compliance Applications Infrared s ensor Description The HIRP3216Q18-C0 i s a GaAlAs infrared LED housed in a min iature SMD package. The device has a pe ak wavelength of 850.
Manufacture

CT Micro

Datasheet
Download HIRP3216Q18-C0 Datasheet


CT Micro HIRP3216Q18-C0

HIRP3216Q18-C0; nm LED spectrally matched with phototran sistor or photodiode. Package Outline Schematic Cathode Anode CT Micro Pr oprietary & Confidential Page 1 Rev 0 (Preliminary) Jun, 2018 HIRP3216Q18-C 0 SMD Type 850nm Infrared Emitter Abso lute Maximum Rating at 250C Symbol Pa rameters IF Continuous Forward Current IFP Peak Forward Current VR Reverse Voltage Topr Oper.


CT Micro HIRP3216Q18-C0

ating Temperature Tstg Storage Temperat ure Tsol Soldering Temperature PD Pow er Dissipation at(or below) 25℃Free A ir Temperature RTHJA Junction to Ambie nt Thermal Resistance Ratings 70 0.7 5 -40 ~ +85 -40 ~ +100 260 140 540 Unit s mA A V 0C 0C 0C mW 0C/W Notes 1 2 E lectro-Optical Characteristics TA = 25 C (unless otherwise specified) Optica l Characteristics Sy.


CT Micro HIRP3216Q18-C0

mbol Parameters Ie Radiant Intensity λp Δλ θ1/2 Peak Wavelength Spectra l Bandwidth Angle of Half Intensity Te st Conditions IF=20mA IF =70mA IF=20mA IF=20mA IF=20mA Min Typ Max Units Note s 12.5 20 - 65 -mW/sr - 830 850 870 nm - 30 - nm - 10 - deg Electrica l Characteristics Symbol Parameters VF Forward Voltage IR Reverse Current Test Conditions IF=20mA.

Part

HIRP3216Q18-C0

Description

Infrared Emitter



Feature


HIRP3216Q18-C0 SMD Type 850nm Infrared E mitter Features Small double-end pack age Viewing Angle = 100 High radia nt intensity High reliability Good sp ectral matching to Si photo detector R oHS compliance Applications Infrared s ensor Description The HIRP3216Q18-C0 i s a GaAlAs infrared LED housed in a min iature SMD package. The device has a pe ak wavelength of 850.
Manufacture

CT Micro

Datasheet
Download HIRP3216Q18-C0 Datasheet




 HIRP3216Q18-C0
HIRP3216Q18-C0
SMD Type 850nm Infrared Emitter
Features
Small double-end package
Viewing Angle = 100
High radiant intensity
High reliability
Good spectral matching to Si photo detector
RoHS compliance
Applications
Infrared sensor
Description
The HIRP3216Q18-C0 is a GaAlAs infrared LED
housed in a miniature SMD package. The device
has a peak wavelength of 850nm LED spectrally
matched with phototransistor or photodiode.
Package Outline
Schematic
Cathode
Anode
CT Micro
Proprietary & Confidential
Page 1
Rev 0 (Preliminary)
Jun, 2018




 HIRP3216Q18-C0
HIRP3216Q18-C0
SMD Type 850nm Infrared Emitter
Absolute Maximum Rating at 250C
Symbol
Parameters
IF Continuous Forward Current
IFP Peak Forward Current
VR Reverse Voltage
Topr Operating Temperature
Tstg Storage Temperature
Tsol Soldering Temperature
PD Power Dissipation at(or below) 25Free Air Temperature
RTHJA Junction to Ambient Thermal Resistance
Ratings
70
0.7
5
-40 ~ +85
-40 ~ +100
260
140
540
Units
mA
A
V
0C
0C
0C
mW
0C/W
Notes
1
2
Electro-Optical Characteristics TA = 25°C (unless otherwise specified)
Optical Characteristics
Symbol
Parameters
Ie Radiant Intensity
λp
Δλ
θ1/2
Peak Wavelength
Spectral Bandwidth
Angle of Half Intensity
Test Conditions
IF=20mA
IF =70mA
IF=20mA
IF=20mA
IF=20mA
Min Typ Max Units Notes
12.5 20
- 65
--
mW/sr
-
830 850 870 nm
- 30 - nm
- 10 - deg
Electrical Characteristics
Symbol
Parameters
VF Forward Voltage
IR Reverse Current
Test Conditions
IF=20mA
IF=70mA
VR=5V
Notes:
1 : IFP Conditions--Pulse Width100μs and Duty1%.
2 : Soldering time5 seconds.
Min Typ Max Units Notes
1.30 1.40
1.40 1.56
--
1.7
2.0
10
V
μA
CT Micro
Proprietary & Confidential
Page 2
Rev 0 (Preliminary)
Jun, 2018




 HIRP3216Q18-C0
HIRP3216Q18-C0
SMD Type 850nm Infrared Emitter
Typical Characteristic Curves
CT Micro
Proprietary & Confidential
Page 3
Rev 0 (Preliminary)
Jun, 2018



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