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Phototransistor Optocoupler. CTH214 Datasheet

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Phototransistor Optocoupler. CTH214 Datasheet






CTH214 Optocoupler. Datasheet pdf. Equivalent




CTH214 Optocoupler. Datasheet pdf. Equivalent





Part

CTH214

Description

Phototransistor Optocoupler



Feature


CTH214 Series AC Input 4-Pin Half Pitch Mini-Flat Phototransistor Optocoupler Features High isolation 3750 VRMS CTR flexibility available see order inform ation DC input with transistor output Operating Temperature range - 55 °C t o 110 °C Regulatory Approvals  UL - UL1577 (E364000)  VDE - EN60747-5- 5(VDE0884-5)  CQC – GB4943.1, GB88 98  IEC60065, IEC60950 Gre.
Manufacture

CT Micro

Datasheet
Download CTH214 Datasheet


CT Micro CTH214

CTH214; en Package Description The CTH214 serie s consists of a phototransistor optical ly coupled to two gallium arsenide Infr aredemitting diode, connected in invers e parallel in a 4lead half pitch Mini-F lat package. Applications Switch mode power supplies Computer peripheral int erface Microprocessor system interface Package Outline Schematic CT Micro Proprietary & Conf.


CT Micro CTH214

idential Page 1 Rev 3 Apr, 2018 CTH21 4 Series AC Input 4-Pin Half Pitch Mini -Flat Phototransistor Optocoupler Abso lute Maximum Rating at 25oC Symbol Pa rameters VISO Isolation voltage PTOT Total power dissipation TOPR Operating temperature TSTG Storage temperature TSOL Soldering temperature Emitter I F IF(TRANS) Forward current Peak trans ient current (≤1μs.


CT Micro CTH214

P.W,300pps) PD Emitter power dissipati on Detector PD Detector power dissipa tion BVCEO Collector-Emitter Breakdown Voltage BVECO Emitter-Collector Break down Voltage IC Collector Current Rat ings 3750 200 -55 ~ +110 -55 ~ +150 260 ±50 1 70 150 80 6 50 Units VRMS mW o C oC oC Notes mA A mW mW V V mA CT Micro Proprietary & Confidential Page 2 Rev 3 Apr, 2018 .

Part

CTH214

Description

Phototransistor Optocoupler



Feature


CTH214 Series AC Input 4-Pin Half Pitch Mini-Flat Phototransistor Optocoupler Features High isolation 3750 VRMS CTR flexibility available see order inform ation DC input with transistor output Operating Temperature range - 55 °C t o 110 °C Regulatory Approvals  UL - UL1577 (E364000)  VDE - EN60747-5- 5(VDE0884-5)  CQC – GB4943.1, GB88 98  IEC60065, IEC60950 Gre.
Manufacture

CT Micro

Datasheet
Download CTH214 Datasheet




 CTH214
CTH214 Series
AC Input 4-Pin Half Pitch Mini-Flat
Phototransistor Optocoupler
Features
High isolation 3750 VRMS
CTR flexibility available see order information
DC input with transistor output
Operating Temperature range - 55 °C to 110 °C
Regulatory Approvals
UL - UL1577 (E364000)
VDE - EN60747-5-5(VDE0884-5)
CQC GB4943.1, GB8898
IEC60065, IEC60950
Green Package
Description
The CTH214 series consists of a phototransistor
optically coupled to two gallium arsenide Infrared-
emitting diode, connected in inverse parallel in a 4-
lead half pitch Mini-Flat package.
Applications
Switch mode power supplies
Computer peripheral interface
Microprocessor system interface
Package Outline
Schematic
CT Micro
Proprietary & Confidential
Page 1
Rev 3
Apr, 2018




 CTH214
CTH214 Series
AC Input 4-Pin Half Pitch Mini-Flat
Phototransistor Optocoupler
Absolute Maximum Rating at 25oC
Symbol
Parameters
VISO Isolation voltage
PTOT Total power dissipation
TOPR Operating temperature
TSTG Storage temperature
TSOL Soldering temperature
Emitter
IF
IF(TRANS)
Forward current
Peak transient current (≤1μs P.W,300pps)
PD Emitter power dissipation
Detector
PD Detector power dissipation
BVCEO Collector-Emitter Breakdown Voltage
BVECO Emitter-Collector Breakdown Voltage
IC Collector Current
Ratings
3750
200
-55 ~ +110
-55 ~ +150
260
±50
1
70
150
80
6
50
Units
VRMS
mW
oC
oC
oC
Notes
mA
A
mW
mW
V
V
mA
CT Micro
Proprietary & Confidential
Page 2
Rev 3
Apr, 2018




 CTH214
CTH214 Series
AC Input 4-Pin Half Pitch Mini-Flat
Phototransistor Optocoupler
Electrical Characteristics TA = 25°C (unless otherwise specified)
Emitter Characteristics
Symbol
Parameters
VF Forward voltage
CIN Input Capacitance
Test Conditions
IF=±10mA
f= 1MHz
Min Typ Max Units Notes
1.24 1.4
V
- 30 - pF
Detector Characteristics
Symbol
Parameters
BVCEO Collector-Emitter Breakdown
BVECO Emitter-Collector Breakdown
ICEO Collector-Emitter Dark Current
Test Conditions
IC= 100µA
IE= 100µA
VCE= 20V, IF=0mA
Min Typ Max Units Notes
80 -
-V
6- -V
- - 100 nA
Transfer Characteristics
Symbol
Parameters
Test Conditions
CTR
Current Transfer
Ratio
CTH214
IF= ±1mA, VCE= 5V
CTH214A
CTR
Current Transfer
Ratio
CTH214
IF= ±5mA, VCE= 5V
CTH214A
CTR Symmetry
IF= ±1mA, VCE= 5V
VCE(SAT)
Collector-Emitter Saturation
Voltage
IF= ±20mA, IC= 1mA
RIO Isolation Resistance
VIO= 500VDC
CIO Isolation Capacitance
f= 1MHz
Min Typ
20 -
50 -
30 -
80 -
0.7 -
- 0.04
5x1010
-
-
0.5
Max
300
150
600
300
1.3
Units Notes
%
%
0.2 V
-
1 pF
Switching Characteristics
Symbol
Parameters
tr Rise Time
tf Fall Time
Test Conditions
Min Typ Max Units Notes
-6-
IC= 2mA, VCE= 2V, RL= 100
µs
-8-
CT Micro
Proprietary & Confidential
Page 3
Rev 3
Apr, 2018



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