P-Channel MOSFET. CTH1706PS-T52 Datasheet

CTH1706PS-T52 MOSFET. Datasheet pdf. Equivalent

Part CTH1706PS-T52
Description P-Channel MOSFET
Feature CTH1706PS-T52 P-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS-60V  Dra.
Manufacture CT Micro
Datasheet
Download CTH1706PS-T52 Datasheet



CTH1706PS-T52
CTH1706PS-T52
P-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS-60V
Drain-Source On-Resistance
RDS(ON) 65m, at VGS= -10V, ID= -20A
RDS(ON) 80m, at VGS= -4.5V, ID= -16A
Continuous Drain Current at TC=25ID =-17A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Description
The CTH1706PS-T52 is the P-Channel logic
enhancement mode power field effect transistors
are produced using high cell density, DMOS trench
technology. This high density process is especially
tailored to minimize on-state resistance.
Applications
Switching Applications
DC/DC Converter
IPC
Package Outline
Schematic
Drain
Gate
Source
Drain
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 3
Jun, 2015



CTH1706PS-T52
CTH1706PS-T52
P-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current @TC=25
IDM Pulsed Drain Current
PD Total Power Dissipation @TC=25
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJC
Thermal Resistance
Junction-Case
Test Conditions
Test Conditions
-60
±20
-17
-71
39.1
-55 to 150
-55 to 150
Min Note
Vs
V
A1
A1
W2
°C
°C
Min Typ Max Units Notes
-- -- 3.2 oC /W 1,4
CT Micro
Proprietary & Confidential
Page 2
Rev 3
Jun, 2015





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