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CTH1706PS-T52

CT Micro

P-Channel MOSFET


Description
CTH1706PS-T52 P-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS-60V  Drain-Source On-Resistance RDS(ON) 65m, at VGS= -10V, ID= -20A RDS(ON) 80m, at VGS= -4.5V, ID= -16A  Continuous Drain Current at TC=25℃ID =-17A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Description The CTH1706PS-T52 is th...



CT Micro

CTH1706PS-T52

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