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CTL0203PS-R3

Part Number	CTL0203PS-R3
Manufacturer	CT Micro
Description	P-Channel MOSFET
Published	May 20, 2020
Detailed Description	CTL0203PS-R3 P-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS -30 V • Drain-Source On-Resist...
Datasheet	CTL0203PS-R3 PDF File

Overview

CTL0203PS-R3 P-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS -30 V • Drain-Source On-Resistance RDS(ON) 160mΩ, at VGS= -4.
5V, ID= -1.
6A RDS(ON) 110mΩ, at VGS= -10V, ID= -2.
0A ℃• Continuous Drain Current at TA=25 ID = -2.
0A • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free Description The CTL0203PS-R3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power manage...

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CTL0203PS-R3 P-Channel MOSFET - CT Micro

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