CTL0322PS-R3 P-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS -20 V Drain-Source On-Resistance
RDS(ON) 55mΩ, at VGS= -4.5V, ID= -3.2A RDS(ON) 70mΩ, at VGS= -2.5V, ID= -2.4A RDS(ON) 100mΩ, at VGS= -1.8V, ID= -1.7A
℃ Continuous Drain Current at TA=25 ID = -3.2A
Advanced high cell density Trench Technology RoHS Compliance & Ha...
