P-Channel MOSFET. CTL0322PS-R3 Datasheet

CTL0322PS-R3 MOSFET. Datasheet pdf. Equivalent

Part CTL0322PS-R3
Description P-Channel MOSFET
Feature CTL0322PS-R3 P-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS -20 V • Dr.
Manufacture CT Micro
Datasheet
Download CTL0322PS-R3 Datasheet



CTL0322PS-R3
CTL0322PS-R3
P-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS -20 V
Drain-Source On-Resistance
RDS(ON) 55m, at VGS= -4.5V, ID= -3.2A
RDS(ON) 70m, at VGS= -2.5V, ID= -2.4A
RDS(ON) 100m, at VGS= -1.8V, ID= -1.7A
Continuous Drain Current at TA=25 ID = -3.2A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Description
The CTL0322PS-R3 is the P-Channel logic enhancement
mode power field effect transistors are produced using
high cell density, DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance.
Applications
Power Management
Lithium Ion Battery
High-Side Switching
Package Outline
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 3
Jun, 2015



CTL0322PS-R3
CTL0322PS-R3
P-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current @TA=25
IDM Pulsed Drain Current
PD Total Power Dissipation
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJA4
Thermal Resistance
Junction-Ambient (t=10s)
Test Conditions
Test Conditions
-20
±12
-3.2
-10
1.4
-55 to 150
-55 to 150
Min Notes
V
V
A1
A1
W2
°C
°C
Min Typ Max Units Notes
-- 65 -- oC /W 1,4
CT Micro
Proprietary & Confidential
Page 2
Rev 3
Jun, 2015





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